nanostructure;
in situ AFM;
vanadium pentoxide;
lithium intercalation;
batteries;
D O I:
10.1016/j.elecom.2007.07.008
中图分类号:
O646 [电化学、电解、磁化学];
学科分类号:
081704 ;
摘要:
EGAFM was used to study in situ the surface nanostructure of V2O5 thin films grown on vanadium metal and its changes during lithium electrochemical intercalation corresponding to the reversible alpha-to-delta phase transition. The results evidence the lateral extension and contraction of the oxide nanograins and the flattening of the oxide film surface. The increase and decrease of the lateral dimensions of the grains show that the surface reflects the volume expansion and contraction resulting from the dimensional changes of the oxide structure when lithium is inserted and de-inserted. An increase of similar to 10% and similar to 15% with respect to pristine oxide film was observed after the formation of the epsilon and delta phases, respectively. The lateral extension of the grains (similar to 7%) and surface flattening subsist after de-intercalation showing the non-fully reversible change of the oxide nanostructure at the interface with the electrolyte. Repeated cycling causes aging characterized by the amplification of the lateral extension of the grains (similar to 17%) and flattening of the oxide surface with respect to the pristine oxide film. It also modifies the surface of the oxide grains by creating new planes indicative of surface reconstruction and/or the emergence of slip planes. (c) 2007 Elsevier B.V. All rights reserved.
机构:
Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India
Singh, Megha
Sharma, Rabindar K.
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机构:
Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India
Sharma, Rabindar K.
Reddy, G. B.
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机构:
Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India
Reddy, G. B.
DAE SOLID STATE PHYSICS SYMPOSIUM 2015,
2016,
1731
机构:
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Lab Adv Nano Mat & Devices, Ningbo 315201, Peoples R China
Univ Sci & Technol China, Nano Sci & Technol Inst, Suzhou 215123, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Lab Adv Nano Mat & Devices, Ningbo 315201, Peoples R China
Zhang, Zhuohui
Xie, Weiping
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机构:
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Lab Adv Nano Mat & Devices, Ningbo 315201, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Lab Adv Nano Mat & Devices, Ningbo 315201, Peoples R China
Xie, Weiping
Li, Jia
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机构:
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Lab Adv Nano Mat & Devices, Ningbo 315201, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Lab Adv Nano Mat & Devices, Ningbo 315201, Peoples R China
Li, Jia
Zhang, Hongliang
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机构:
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Lab Adv Nano Mat & Devices, Ningbo 315201, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Lab Adv Nano Mat & Devices, Ningbo 315201, Peoples R China
Zhang, Hongliang
Wang, Qiang
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机构:
Ningbo Wakan Elect Sci Technol Co LTD, Ningbo 315475, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Lab Adv Nano Mat & Devices, Ningbo 315201, Peoples R China
Wang, Qiang
Zhang, Chengli
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机构:
Ningbo Wakan Elect Sci Technol Co LTD, Ningbo 315475, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Lab Adv Nano Mat & Devices, Ningbo 315201, Peoples R China
Zhang, Chengli
Xu, Guanglong
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机构:
Ningbo Wakan Elect Sci Technol Co LTD, Ningbo 315475, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Lab Adv Nano Mat & Devices, Ningbo 315201, Peoples R China
Xu, Guanglong
Gao, Junhua
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机构:
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Lab Adv Nano Mat & Devices, Ningbo 315201, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Lab Adv Nano Mat & Devices, Ningbo 315201, Peoples R China
Gao, Junhua
Rogachev, A. A.
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h-index: 0
机构:
Natl Acad Sci Belarus, Inst Chem New Mat, Opt Anisotrop Films Lab, Minsk 220141, BELARUSChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Lab Adv Nano Mat & Devices, Ningbo 315201, Peoples R China
Rogachev, A. A.
Cao, Hongtao
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h-index: 0
机构:
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Lab Adv Nano Mat & Devices, Ningbo 315201, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Lab Adv Nano Mat & Devices, Ningbo 315201, Peoples R China