Leaky Integrate-and-Fire Biristor Neuron

被引：83

作者：

Han, Jin-Woo ^{[1
]}

Meyyappan, M. ^{[1
]}

机构：

[1] NASA Ames Res Ctr, Ctr Nanotechnol, Moffett Field, CA 94035 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 09期

关键词：

Neuromorphic computing; spiking neural network; neuron; leaky integrate-and-fire; biristor; SYNAPSES; CIRCUIT; NETWORK;

D O I：

10.1109/LED.2018.2856092

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Spiking neural network has attracted much attention due to its efficient learning and recognition capability. Herein, a leaky integrate-and-fire (LIF) neuron is implemented using conventional silicon fabrication on 4F2 footprint. A vertical n-p-n back-to-back diode with floating p-base region, referred as biristor, functions as the LIF neuron. A static current drive results in closed loop feedback in the biristor, exhibiting output voltage oscillation due to periodic charging and discharging in the floating p-base. The LIF rate linearly increases with the drive current. A spiking frequency of up to a few kHz is verified.

引用

页码：1457 / 1460

页数：4

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