0.25-μm GaN TeraFETs Optimized as THz Power Detectors and Intensity-Gradient Sensors

被引：43

作者：

Boppel, Sebastian ^{[1
]}

Ragauskas, Mantas ^{[2
]}

Hajo, Ahid ^{[1
]}

Bauer, Maris ^{[1
]}

Lisauskas, Alvydas ^{[1
,2
,3
]}

Chevtchenko, Sergey ^{[4
]}

Raemer, Adam ^{[4
]}

Kasalynas, Irmantas ^{[2
]}

Valusis, Gintaras ^{[2
]}

Wuerfl, Hans-Joachim ^{[4
]}

Heinrich, W. ^{[4
]}

Traenkle, Guenther ^{[4
]}

Krozer, Viktor ^{[1
,4
]}

Roskos, Hartmut G. ^{[1
]}

机构：

[1] Goethe Univ Frankfurt, Inst Phys, D-60438 Frankfurt, Germany

[2] Ctr Phys Sci & Technol, Vilnius, Lithuania

[3] Vilnius State Univ, Dept Radiophys, LT-10222 Vilnius, Lithuania

[4] Leibniz Inst Hochstfrequenztech, FBI, D-12489 Berlin, Germany

来源：

IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY | 2016年 / 6卷 / 02期

关键词：

AlGaN/GaN HEMTs; field-effect transistors; plasma-wave-based detection; submillimeter-wave integrated circuits; terahertz radiation detector; TERAHERTZ RADIATION; PERFORMANCE;

D O I：

10.1109/TTHZ.2016.2520202

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports on the influence of illumination conditions on the detector response of three-terminal devices. Antenna-coupled field-effect transistors for the plasmonic detection of THz radiation (TeraFETs) were realized using a 0.25-mu m AlGaN/GaN process. Integrated bow-tie antennas are connected to the source, drain and gate terminals of electrically identical transistors in various ways. If radiation power is coupled symmetrically to the source and drain sides of the transistors' channels, TeraFETs become sensitive to gradient-intensity of the illumination power. It is found that fully asymmetric coupling, nontrivial to ensure at THz-frequencies, is required for a pure response to incident power.

引用

页码：348 / 350

页数：3

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