Comparison of self-assisted VLS GaAs nanowires grown by MBE on Si (111) and GaAs (111)B substrates

被引：0

作者：

Vorathamrong, Samatcha ^{[1
]}

Panyakeow, Somsak ^{[1
]}

Ratanathammaphan, Somchai ^{[1
]}

Praserthdam, Piyasan ^{[2
]}

Thongyam, Chiraporn ^{[3
]}

机构：

[1] Chulalongkorn Univ, Dept Elect Engn, Semicond Device Res Lab, Bangkok 10330, Thailand

[2] Chulalongkorn Univ, Ctr Excellence Catalysis & Catalyt React Engn, Dept Chem Engn, Bangkok 10330, Thailand

[3] Chulalongkorn Univ, Ctr Res & Technol Dev, Mektec Mfg Ltd, Bangkok 10330, Thailand

来源：

33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2017年 / 864卷

关键词：

SILICON;

D O I：

10.1088/1742-6596/864/1/012004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work GaAs nanowires were grown by self-assisted growth method with completely identical growth parameters, such as growth temperature, growth time, Ga and As flux, on GaAs (111)B and Si (111) substrates using Molecular Beam Epitaxy (MBE). All samples were then characterized by Scanning Electron Microscope (SEM), Energy-dispersive X-ray spectroscopy (EDX), and X-ray Diffraction (XRD). The results from both substrates were compared in order to understand the effect of substrate type on nanowires.

引用

页数：4

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