Electron spin resonance in neutron-irradiated n-type 6H-silicon carbide

被引：4

作者：

Kanazawa, S ^{[1
]}

Kimura, I

Okada, M

Nozaki, T

Kanno, I

Ishihara, S

Watanabe, M

机构：

[1] Kyoto Univ, Dept Nucl Engn, Kyoto 6068501, Japan

[2] Kyoto Univ, Inst Res Reactor, Kumatori, Osaka 5900494, Japan

[3] Ion Engn Res Inst Corp, Hirakata, Osaka 5730128, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

annealing; electron spin resonance; neutron irradiation; radiation defect; silicon vacancy;

D O I：

10.4028/www.scientific.net/MSF.338-342.825

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In order to investigate the defects in n-type 6H-SiC single crystals caused by neutron irradiation, electron spin resonance (ESR) measurement was carried out for neutron irradiated samples during annealing up to 1,400 degreesC. Six centers arising from radiation induced defects were observed in ESR spectra at liquid nitrogen temperature. The angular dependences and isochronal annealing behaviors of these centers are also described. On the basis of the results, we discuss the structural models for these defects.

引用

页码：825 / 828

页数：4

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