Growth shape control of group-III nitrides by selective area MOVPE

被引：0

作者：

Kobayashi, N ^{[1
]}

Akasaka, T ^{[1
]}

Ando, S ^{[1
]}

Kumagai, M ^{[1
]}

机构：

[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

OPTOELECTRONIC MATERIALS AND DEVICES | 1998年 / 3419卷

关键词：

GaN; MOVPE; selective area epitaxy; hexagonal micro prism; facet laser;

D O I：

10.1117/12.310989

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In the selective area metal-organic vapor phase epitaxy, III-V micro-crystals surrounded by low-index crystallographic facets are grown on the open area of the masked substrate. The shape of grown crystal can be controlled by changing the growth condition and/or the mask pattern. On the (111)B substrate, highly symmetrical tetrahedron, hexagonal and regular triangle prisms can be grown in a mu m scale. The application to micro-lasers called "Facet Laser" makes the most use of facet growth because flat and damage-free vertical-facets are best fitted to the laser resonator. Even in group III nitrides, which are extremely hard and chemically inactive, we succeeded in the growth of GaN hexagonal micro prisms and observed the optically pumped room-temperature lasing by ring-cavity mode.

引用

页码：2 / 6

页数：5