Optimum design of the field plate in the cylindrical p+n junction:: Analytical approach

被引：5
作者：
Yang, K [1 ]
Byeon, DS
Han, MK
Choi, YI
机构：
[1] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea
[2] Ajou Univ, Sch Elect Engn, Suwon 442749, South Korea
来源：
SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 09期
关键词：
D O I：
10.1016/S0038-1101(98)00128-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Analysis of the breakdown voltage in the p(+)n junction with the field plate is presented for an optimum design. The breakdown voltage is analyzed by employing the approximated electric field and breakdown path in terms of the field plate parameters and the applied reverse bias. The optimum values for oxide thickness and the field plate width are derived by the use of the breakdown voltage. The calculated breakdown voltages agree well with the experimental data and two-dimensional numerical simulation result. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1651 / 1655
页数：5
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