Ambipolar Photoresponsivity in an Ultrasensitive Photodetector Based on a WSe2/InSe Heterostructure by a Photogating Effect

被引：44

作者：

Lei, Ting ^{[1
,2
]}

Tu, Huayao ^{[1
,2
]}

Lv, Weiming ^{[1
]}

Ma, Haixin ^{[1
]}

Wang, Jiachen ^{[1
]}

Hu, Rui ^{[1
,2
]}

Wang, Qilitai ^{[1
]}

Zhang, Like ^{[1
,2
]}

Fang, Bin ^{[3
]}

Liu, Zhongyuan ^{[4
,5
]}

Shi, Wenhua ^{[1
,2
]}

Zeng, Zhongming ^{[1
,2
,3
]}

机构：

[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanofabricat Facil, Suzhou 215123, Jiangsu, Peoples R China

[2] Univ Sci & Technol China, Sch Nano Technol & Nano Bion, Hefei 230026, Anhui, Peoples R China

[3] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanchang Nanodevices & Technol Div, Nanchang 330200, Jiangxi, Peoples R China

[4] Yanshan Univ, Sch Sci, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Hebei, Peoples R China

[5] Yanshan Univ, Key Lab Microstruct Mat Phys Hebei Prov, Sch Sci, Qinhuangdao 066004, Hebei, Peoples R China

来源：

ACS APPLIED MATERIALS & INTERFACES | 2021年 / 13卷 / 42期

基金：

国家重点研发计划; 中国博士后科学基金; 中国国家自然科学基金;

关键词：

WSe2/InSe heterostructure; photogating effect; tunable ambipolar photoresponsivity; broadband photodetection; ultrahigh detectivity; PHOTOCURRENT GENERATION; PHOTOTRANSISTORS;

D O I：

10.1021/acsami.1c12330

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ambipolar photoresponsivity mainly originates from intrinsic or interfacial defects. However, these defects are difficult to control and will prolong the response speed of the photodetector. Here, we demonstrate tunable ambipolar photoresponsivity in a photodetector built from vertical p-WSe2/n-InSe heterostructures with photogating effect, exhibiting ultrahigh photoresponsivity from -1.76 X 10(4) to 5.48 x 10(4) A/W. Moreover, the photodetector possesses broadband photodetection (365-965 nm), an ultrahigh specific detectivity (D*) of 5.8 x 10(13) Jones, an external quantum efficiency of 1.86 x 10(7)%, and a rapid response time of 20.8 ms. The WSe2/InSe vertical architecture has promising potential in developing high-performance nano- optoelectronics.

引用

页码：50213 / 50219

页数：7

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