Fast Optical Detecting Media Based on Semiconductor Nanostructures for Recording Images Obtained Using Charges of Free Photocarriers

被引:0
作者
Kasherininov, P. G. [1 ]
Tomasov, A. A. [1 ]
Beregulin, E. V. [1 ]
机构
[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
关键词
INTERMEDIATE INSULATING LAYER; MIS TUNNEL-DIODES; PHOTOELECTRIC PROPERTIES; CHARACTERISTIC FEATURES; CURRENT MULTIPLICATION; LIGHT; CRYSTALS; PHOTOCURRENT; INTERFACE; CONTACTS;
D O I
10.1134/S1063782611010106
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Available published data on the properties of optical recording media based on semiconductor structures are reviewed. The principles of operation, structure, parameters, and the range of application for optical recording media based on MIS structures formed of photorefractive crystals with a thick layer of insulator and MIS structures with a liquid crystal as the insulator (the MIS LC modulators), as well as the effect of optical bistability in semiconductor structures (semiconductor MIS structures with nanodimensionally thin insulator (TI) layer, M(TI) S nanostructures). Special attention is paid to recording media based on the M(TI) S nanostructures promising for fast processing of highly informative images and to fabrication of optoelectronic correlators of images for noncoherent light.
引用
收藏
页码:1 / 20
页数:20
相关论文
共 62 条