Theory of epsilon-near-zero modes in ultrathin films

被引：235

作者：

Campione, Salvatore ^{[1
,2
]}

Brener, Igal ^{[1
,2
]}

Marquier, Francois ^{[3
]}

机构：

[1] Sandia Natl Labs, Ctr Integrated Nanotechnol CINT, Albuquerque, NM 87185 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

[3] Univ Paris Sud, CNRS, Inst Opt, Lab Charles Fabry, F-91127 Palaiseau, France

来源：

PHYSICAL REVIEW B | 2015年 / 91卷 / 12期

关键词：

OPTICAL-PROPERTIES; SURFACE-PLASMONS; THIN; ABSORPTION; EMISSION; WAVES;

D O I：

10.1103/PhysRevB.91.121408

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The physics of the epsilon-near-zero (ENZ) mode, which is supported by a nanolayer at the frequency where the dielectric permittivity vanishes, has recently been a subject of debate. In this Rapid Communication, we thoroughly investigate and clarify the physics of this mode, providing its main characteristics and its domain of existence. This understanding will benefit all the applications that rely on ENZ modes in semiconductor nanolayers, including directional perfect absorption, voltage-tunable devices, and ultrafast thermal emission.

引用

页数：5