White-light-enhanced resistive switching in C/ZnO/C heterostructures

被引：2

作者：

Wu, Liangchen ^{[1
]}

Wang, Junshuai ^{[1
]}

Lu, Yu ^{[1
]}

Tang, Yuanyuan ^{[1
]}

Chen, Peng ^{[1
]}

机构：

[1] Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China

来源：

CHEMICAL PHYSICS LETTERS | 2018年 / 711卷

基金：

美国国家科学基金会;

关键词：

Resistive switching; C/ZnO/C; White light; MEMORY; BEHAVIORS; DEVICES;

D O I：

10.1016/j.cplett.2018.09.041

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The C/ZnO/C heterostructure is fabricated on single silicon substrate using magnetron sputtering system. The device shows an obvious bipolar resistive switching (RS) memory behavior, which can be modulated by the white light at room temperature. The RS ratio and Set/Reset voltage can be controlled by the white light. A high RS ratio of 10(5) under illumination can be obtained, while the RS ratio in the dark is about 3. Not only the favorable RS ratio can be realized, but also the RS behaviors show excellent stability and endurance characteristics in C/ZnO/C memory cells. Based on the double-logarithm I-V fitting, the electrons trapping and de-trapping should result in the resistive switching behavior of C/ZnO/C memory cells.

引用

页码：213 / 215

页数：3

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