Absolute Electroluminescence Imaging Diagnosis of GaAs Thin-Film Solar Cells

被引：10

作者：

Hu, XiaoBo ^{[1
]}

Chen, Tengfei ^{[1
]}

Xue, Juanjuan ^{[1
]}

Weng, Guoen ^{[1
]}

Chen, Shaoqiang ^{[1
]}

Akiyama, Hidefumi ^{[2
,4
]}

Zhu, Ziqiang ^{[3
]}

机构：

[1] East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China

[2] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan

[3] East China Normal Univ, Shanghai 200241, Peoples R China

[4] AIST UTokyo Adv Operandomeasurement Technol Open, Chiba 2778589, Japan

来源：

IEEE PHOTONICS JOURNAL | 2017年 / 9卷 / 05期

基金：

美国国家科学基金会;

关键词：

Luminiescence and fluorescence; imaging systems; PHOTOVOLTAIC MODULES; PHOTOLUMINESCENCE; MULTIJUNCTION;

D O I：

10.1109/JPHOT.2017.2731800

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A spatially resolved absolute electroluminescence (EL) imaging method was utilized to analyze the photovoltaic properties and resistive loss properties of aGaAs thin-film solar cell. The I-V relation was extrapolated from the absolute EL efficiency measurements in conjunction with the external-quantum-efficiency (EQE) measurements; the EL extrapolated I-V relation has a merit over the conventional I-V relation measured with a solar simulator that it could eliminate the series resistance effect caused by external probe contact. Then, the mapping of the internal voltage of the solar cell and the sheet resistance of the window layer of the solar cell were obtained from the calibrated absolute EL imaging method. Finally, optic electroconversion losses of the solar cell including radiative loss, nonradiative loss, thermalization loss, transmission loss, and junction loss were quantified given by the EL and EQE measurements.

引用

页数：9

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