Topological invariant in three-dimensional band insulators with disorder

被引:30
作者
Guo, H. -M. [1 ,2 ]
机构
[1] Capital Normal Univ, Dept Phys, Beijing 100048, Peoples R China
[2] Univ British Columbia, Dept Phys & Astron, Vancouver, BC V6T 1Z1, Canada
来源
PHYSICAL REVIEW B | 2010年 / 82卷 / 11期
基金
加拿大自然科学与工程研究理事会;
关键词
QUANTIZED HALL CONDUCTANCE; SINGLE DIRAC CONE; MATRICES; SURFACE; BI2TE3;
D O I
10.1103/PhysRevB.82.115122
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Topological insulators in three dimensions are characterized by a Z(2)-valued topological invariant, which consists of a strong index and three weak indices. In the presence of disorder, only the strong index survives. This paper studies the topological invariant in disordered three-dimensional system by viewing it as a supercell of an infinite periodic system. As an application of this method we show that the strong index becomes nontrivial when strong enough disorder is introduced into a trivial insulator with spin-orbit coupling, realizing a strong topological Anderson insulator. We also numerically extract the gap range and determine the phase boundaries of this topological phase, which fits well with those obtained from self-consistent Born approximation and the transport calculations.
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页数:5
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