Initial oxynitridation of a Si(001)-2x1 surface by NO

被引：0

作者：

Miyata, N ^{[1
]}

Watanabe, H ^{[1
]}

Ichikawa, M ^{[1
]}

机构：

[1] Angstrom Technol Partnership, Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 3050046, Japan

来源：

STRUCTURE AND ELECTRONIC PROPERTIES OF ULTRATHIN DIELECTRIC FILMS ON SILICON AND RELATED STRUCTURES | 2000年 / 592卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the initial oxynitridation of an atomically flat Si(001)-2x1 surface by NO. We found that appropriate oxynitridation conditions, in which oxide decomposition does not occur, are required to suppress the roughness of the NO-reacted Si surface. Under these conditions, we investigated the growth behavior and chemical structure. The first oxynitridation, in which NO reacts with the first Si layer on the Si(001)-2x1 surface, takes place in a layer-by-layer manner caused by two-dimensional nucleation. However, further oxynitridation for the second Si layer proceeds in a three-dimensional manner in which the atomic-scale roughness at the oxynitride/Si interface increases. In addition, under our oxynitridation conditions, N is incorporated as Ni=Si-3, even though the oxynitride is ultrathin.

引用

页码：233 / 238

页数：6

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