Initial oxynitridation of a Si(001)-2x1 surface by NO

被引：0

作者：

Miyata, N ^{[1
]}

Watanabe, H ^{[1
]}

Ichikawa, M ^{[1
]}

机构：

[1] Angstrom Technol Partnership, Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 3050046, Japan

来源：

STRUCTURE AND ELECTRONIC PROPERTIES OF ULTRATHIN DIELECTRIC FILMS ON SILICON AND RELATED STRUCTURES | 2000年 / 592卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the initial oxynitridation of an atomically flat Si(001)-2x1 surface by NO. We found that appropriate oxynitridation conditions, in which oxide decomposition does not occur, are required to suppress the roughness of the NO-reacted Si surface. Under these conditions, we investigated the growth behavior and chemical structure. The first oxynitridation, in which NO reacts with the first Si layer on the Si(001)-2x1 surface, takes place in a layer-by-layer manner caused by two-dimensional nucleation. However, further oxynitridation for the second Si layer proceeds in a three-dimensional manner in which the atomic-scale roughness at the oxynitride/Si interface increases. In addition, under our oxynitridation conditions, N is incorporated as Ni=Si-3, even though the oxynitride is ultrathin.

引用

页码：233 / 238

页数：6

共 24 条

[1] THE REACTION OF SI(100) 2X1 WITH NO AND NH3 - THE ROLE OF SURFACE DANGLING BONDS [J].

AVOURIS, P ;

BOZSO, F ;

HAMERS, RJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1387-1392

[2] MOS CHARACTERISTICS OF ULTRATHIN NO-GROWN OXYNITRIDES [J].

BHAT, M ;

KIM, J ;

YAN, J ;

YOON, GW ;

HAN, LK ;

KWONG, DL .

IEEE ELECTRON DEVICE LETTERS, 1994, 15 (10) :421-423

[3]

CAR EC, 1993, APPL PHYS LETT, V63, P54

[4] Observation of oxide/Si(001)-interface during layer-by-layer oxidation by scanning reflection electron microscopy [J].

Fujita, S ;

Watanabe, H ;

Maruno, S ;

Ichikawa, M ;

Kawamura, T .

APPLIED PHYSICS LETTERS, 1997, 71 (07) :885-887

[5] HIGHLY SUPPRESSED BORON PENETRATION IN NO-NITRIDED SIO2 FOR P(+)-POLYSILICON GATED MOS DEVICE APPLICATIONS [J].

HAN, LK ;

WRISTERS, D ;

YAN, J ;

BHAT, M ;

KWONG, DL .

IEEE ELECTRON DEVICE LETTERS, 1995, 16 (07) :319-321

[6] Characterization of silicon/oxide/nitride layers by x-ray photoelectron spectroscopy [J].

Hansch, W ;

Nakajima, A ;

Yokoyama, S .

APPLIED PHYSICS LETTERS, 1999, 75 (11) :1535-1537

[7]

HEDGE RI, 1995, APPL PHYS LETT, V66, P2882

[8] MICROSCOPIC STRUCTURE OF THE SIO2/SI INTERFACE [J].

HIMPSEL, FJ ;

MCFEELY, FR ;

TALEBIBRAHIMI, A ;

YARMOFF, JA ;

HOLLINGER, G .

PHYSICAL REVIEW B, 1988, 38 (09) :6084-6096

[9] CORRELATION BETWEEN ELECTRON TRAP DENSITY AND HYDROGEN CONCENTRATION IN ULTRATHIN RAPIDLY REOXIDIZED NITRIDED OXIDES [J].

HORI, T ;

IWASAKI, H ;

YOSHIOKA, Y ;

SATO, M .

APPLIED PHYSICS LETTERS, 1988, 52 (09) :736-738

[10] ELECTRICAL CHARACTERISTICS OF ULTRATHIN OXYNITRIDE GATE DIELECTRIC PREPARED BY RAPID THERMAL-OXIDATION OF SI IN N2O [J].

HWANG, HS ;

TING, WC ;

MAITI, B ;

KWONG, DL ;

LEE, J .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1010-1011

← 1 2 3 →