Vast Structural and Polymorphic Varieties of Semiconductors AMM′Q4 (A = K, Rb, Cs, Tl; M = Ga, In; M′ = Ge, Sn; Q = S, Se)

被引:7
作者
Friedrich, Daniel [1 ]
Hao, Shiqiang [2 ]
Patel, Shane [2 ]
Wolverton, Chris [2 ]
Kanatzidis, Mercouri G. [1 ]
机构
[1] Northwestern Univ, Dept Chem, 2145 Sheridan Rd, Evanston, IL 60208 USA
[2] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
基金
美国国家科学基金会;
关键词
NONLINEAR-OPTICAL MATERIAL; 1ST-PRINCIPLES DFT CALCULATIONS; ELECTRONIC-STRUCTURE; CRYSTAL-STRUCTURE; SULFIDES; CHALCOGENIDE; VARIANTS; FEATURES; METALS; MELTS;
D O I
10.1021/acs.chemmater.1c02211
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Nine new chalcogenide semiconductors AInM'Q(4) (A(+) = K+, Rb+, Cs+, Tl+; M'(4+) = Ge4+, Sn4+; Q(2-) = S2-, Se2-) have been prepared by solid-state syntheses and structurally characterized by single-crystal X-ray diffraction techniques. These new phases fill in the missing links in these quaternary systems and crystallize in various two-dimensional layered polymorphs, while combinations containing large M3+ and M'(4+) cations also adopt an extended three-dimensional (3D) network structure. The AMM'Q(4) materials exhibit a wide range of band gaps with colored selenides (1.8 eV < E-g < 2.3 eV) and mostly white sulfides (2.5 eV < E-g < 3.6 eV). These phases have direct band gaps except for the thallium analogues and the cubic AGaSnSe(4)-cP84. First-principles theoretical calculations of the electronic band structures reveal critical insight into the structure/property relationships of these materials. The distinct polymorphism of these quaternary phases is studied by discussing kinetic and thermodynamic factors responsible for the crystallization, structural considerations, and complementary density functional theory (DFT) calculations.
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页码:6572 / 6583
页数:12
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