TiAlSi cathode;
TiAlSiN coating;
Microstructure;
Plasma immersion ion implantation and deposition;
NANOCOMPOSITE COATINGS;
TRIBOLOGICAL PROPERTIES;
MECHANICAL-PROPERTIES;
OXIDATION BEHAVIOR;
THIN-FILMS;
SI CONTENT;
MULTILAYERS;
EVOLUTION;
PEAK;
TEM;
D O I:
10.1016/j.vacuum.2020.109194
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
TiAlSiN coatings with different Si contents (1.84-4.81 at.%) were prepared on WC-Co substrates by plasma immersion ion implantation and deposition using different TiAlSi cathodes. (Ti, Al)N (200), (220) and (311) diffraction peaks could be found in X-ray diffraction (XRD) patterns of the as-deposited coatings and a preferred orientation (Ti, Al)N (200) was obvious for all samples. X-ray photoelectron spectroscopy (XPS) results showed the existence of TiN, MN, TiOxNy and SiNx. High resolution transmission electron microscopy (HRTEM) images exhibited that the microstructure of TiAlSiN coating was gradually changed from poly-nanocrystalline to (200) preferred oriented (Ti, Al)N embedded in an amorphous matrix. Nanoindentation results revealed that all the coatings exhibited high hardness, where the maximum value reached 45.3 GPa at a silicon content of 3.43 at.%. Scratch tests were performed on these samples, and the highest critical load (L-C4) of the coatings reached 158.4 N, indicating that good adhesive strength was obtained by this deposition method.
机构:
Hungarian Acad Sci, Chem Res Ctr, Res Lab Mat & Environm Chem, H-1525 Budapest, HungaryHungarian Acad Sci, Chem Res Ctr, Res Lab Mat & Environm Chem, H-1525 Budapest, Hungary
机构:
Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R ChinaChinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
Chen, Tian
Xie, Zhiwen
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机构:
Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R ChinaChinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
Xie, Zhiwen
Gong, Feng
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机构:
Shenzhen Univ, Shenzhen Key Lab Adv Mfg Technol Mold & Die, Shenzhen 518060, Peoples R ChinaChinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
Gong, Feng
Luo, Zhuangzhu
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机构:
Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R ChinaChinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
Luo, Zhuangzhu
Yang, Zhi
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h-index: 0
机构:
Shenzhen Univ, Shenzhen Key Lab Adv Mfg Technol Mold & Die, Shenzhen 518060, Peoples R ChinaChinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
机构:
Hungarian Acad Sci, Chem Res Ctr, Res Lab Mat & Environm Chem, H-1525 Budapest, HungaryHungarian Acad Sci, Chem Res Ctr, Res Lab Mat & Environm Chem, H-1525 Budapest, Hungary
机构:
Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R ChinaChinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
Chen, Tian
Xie, Zhiwen
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R ChinaChinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
Xie, Zhiwen
Gong, Feng
论文数: 0引用数: 0
h-index: 0
机构:
Shenzhen Univ, Shenzhen Key Lab Adv Mfg Technol Mold & Die, Shenzhen 518060, Peoples R ChinaChinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
Gong, Feng
Luo, Zhuangzhu
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R ChinaChinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
Luo, Zhuangzhu
Yang, Zhi
论文数: 0引用数: 0
h-index: 0
机构:
Shenzhen Univ, Shenzhen Key Lab Adv Mfg Technol Mold & Die, Shenzhen 518060, Peoples R ChinaChinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China