Lattice disorder produced in GaN by He-ion implantation

被引：15

作者：

Han, Yi ^{[1
,2
]}

Peng, Jinxin ^{[3
]}

Li, Bingsheng ^{[1
]}

Wang, Zhiguang ^{[1
]}

Wei, Kongfang ^{[1
]}

Shen, Tielong ^{[1
]}

Sun, Jianrong ^{[1
]}

Zhang, Limin ^{[3
]}

Yao, Cunfeng ^{[1
]}

Gao, Ning ^{[1
]}

Gao, Xing ^{[1
]}

Pang, Lilong ^{[1
]}

Zhu, Yabin ^{[1
]}

Chang, Hailong ^{[1
]}

Cui, Minghuan ^{[1
]}

Luo, Peng ^{[1
]}

Sheng, Yanbin ^{[1
]}

Zhang, Hongpeng ^{[1
]}

Zhang, Li ^{[4
]}

Fang, Xuesong ^{[1
,2
]}

Zhao, Sixiang ^{[1
]}

Jin, Jin ^{[1
]}

Huang, Yuxuan ^{[1
]}

Liu, Chao ^{[1
]}

Tai, Pengfei ^{[1
]}

Wang, Dong ^{[1
,2
]}

He, Wenhao ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China

[2] China Grad Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Gansu, Peoples R China

[4] Lanzhou Univ Technol, Sch Sci, Dept Phys, Lanzhou 730050, Gansu, Peoples R China

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2017年 / 406卷

基金：

中国国家自然科学基金;

关键词：

He-ion implantation; GaN; Microstructure; Lattice disorder; Lattice strain; MECHANICAL-PROPERTIES; MICROHARDNESS; TECHNOLOGY; RAMAN; AR;

D O I：

10.1016/j.nimb.2016.12.039

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The lattice disorders induced by He-ion implantation in GaN epitaxial films to fluences of 2 x 10(16), 5 x 10(16) and 1 x 10(17) cm(-2) at room temperature (RT) have been investigated by a combination of Raman spectroscopy, high-resolution X-ray diffraction (HRXRD), nano-indentation, and transmission electron microscopy (TEM). The experimental results present that Raman intensity decreases with increasing fluence. Raman frequency "red shift" occurs after He-ion implantation. Strain increases with increasing fluence. The hardness of the highly damaged layer increases monotonically with increasing fluence. Microstructural results demonstrate that the width of the damage band and the number density of observed dislocation loops increases with increasing fluence. High-resolution TEM images exhibit that He-ion implantation lead to the formation of planar defects and most of the lattice defects are of interstitial-type basal loops. The relationships of Raman intensity, lattice strain, swelling and hardness with He-implantation-induced lattice disorders are discussed. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：543 / 547

页数：5

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