2D anomalous magnetoresistance in the presence of spin-orbit scattering

被引：0

作者：

Averkiev, Nikita S. ^{[1
]}

Romanov, Konstantin S. ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

INTERNATIONAL JOURNAL OF NANOSCIENCE, VOL 6, NOS 3 AND 4 | 2007年 / 6卷 / 3-4期

关键词：

2D; weak localization; spin;

D O I：

10.1142/S0219581X07004559

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The model of weak localization in 2D semiconductor structures in the whole range of classically weak magnetic fields in the presence of the Elliot-Yafet spin relaxation has been developed. It was shown that the spin-orbit interaction influences the value of magnetoresistance in small magnetic fields (within diffusion approximation) and when diffusion approximation is no longer valid.

引用

页码：187 / 189

页数：3

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