A Study of Ultrathin Superconducting Films of Niobium Nitride Obtained by Atomic Layer Deposition

被引：2

作者：

Shibalov, M. V. ^{[1
]}

Porokhov, N. V. ^{[1
]}

Mumlyakov, A. M. ^{[1
]}

Trofimov, I. V. ^{[1
]}

Dyud'bin, G. D. ^{[1
]}

Timofeeva, E. R. ^{[1
]}

Tagachenkov, A. M. ^{[1
]}

Anufriev, Yu. V. ^{[1
]}

Zenova, E. V. ^{[1
]}

Tarkhov, M. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Nanotechnol Microelect, Moscow 119991, Russia

来源：

TECHNICAL PHYSICS | 2021年 / 66卷 / 05期

关键词：

NBN FILMS; RESISTIVITY; ALD;

D O I：

10.1134/S1063784221040174

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method is presented for the deposition of ultrathin superconducting NbNx films by atomic layer deposition enhanced by plasma from an organometallic precursor and an H-2/Ar gas mixture used as a reactant. The samples obtained are characterized by measurements of resistivity, spectral ellipsometry, atomic force microscopy, and measurements of superconducting characteristics. The optimal parameters of the H-2/Ar gas ratio are determined at which the resistivity of the NbNx films is minimal. A comparative analysis of the resistivity of the obtained NbNx films is carried out. The dependence of the temperature of transition to the superconducting state on film thickness is investigated. A transition temperature of 13.7 K and a critical current density of 0.7 MA/cm(2) are reached. The high film uniformity, precision control of the thickness, and deposition temperature of 350 degrees C make it possible to use these films in the production of field-effect transistors and in functional devices for various purposes, for example, in hot-electron bolometers, kinetic inductance detectors, and superconducting single-photon detectors.

引用

页码：658 / 663

页数：6

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