A Study of Ultrathin Superconducting Films of Niobium Nitride Obtained by Atomic Layer Deposition

被引:2
|
作者
Shibalov, M. V. [1 ]
Porokhov, N. V. [1 ]
Mumlyakov, A. M. [1 ]
Trofimov, I. V. [1 ]
Dyud'bin, G. D. [1 ]
Timofeeva, E. R. [1 ]
Tagachenkov, A. M. [1 ]
Anufriev, Yu. V. [1 ]
Zenova, E. V. [1 ]
Tarkhov, M. A. [1 ]
机构
[1] Russian Acad Sci, Inst Nanotechnol Microelect, Moscow 119991, Russia
关键词
NBN FILMS; RESISTIVITY; ALD;
D O I
10.1134/S1063784221040174
中图分类号
O59 [应用物理学];
学科分类号
摘要
A method is presented for the deposition of ultrathin superconducting NbNx films by atomic layer deposition enhanced by plasma from an organometallic precursor and an H-2/Ar gas mixture used as a reactant. The samples obtained are characterized by measurements of resistivity, spectral ellipsometry, atomic force microscopy, and measurements of superconducting characteristics. The optimal parameters of the H-2/Ar gas ratio are determined at which the resistivity of the NbNx films is minimal. A comparative analysis of the resistivity of the obtained NbNx films is carried out. The dependence of the temperature of transition to the superconducting state on film thickness is investigated. A transition temperature of 13.7 K and a critical current density of 0.7 MA/cm(2) are reached. The high film uniformity, precision control of the thickness, and deposition temperature of 350 degrees C make it possible to use these films in the production of field-effect transistors and in functional devices for various purposes, for example, in hot-electron bolometers, kinetic inductance detectors, and superconducting single-photon detectors.
引用
收藏
页码:658 / 663
页数:6
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