XPS and factor analysis study of initial stages of cerium oxide growth on polycrystalline tungsten

被引:24
|
作者
Polyak, Yaroslav [1 ]
Bastl, Z. [2 ]
机构
[1] Acad Sci Czech Republ, Inst Phys, CZ-18221 Prague 8, Czech Republic
[2] Acad Sci Czech Republ, J Heyrovsky Inst Phys Chem, CZ-18223 Prague 8, Czech Republic
关键词
XPS; FA; PLD; cerium oxide; WO3; Ce (3d); RAY PHOTOELECTRON-SPECTROSCOPY; PULSED-LASER DEPOSITION; THIN-FILMS; ELECTRONIC-STRUCTURE; THERMAL-PROPERTIES; SURFACE OXIDATION; OXYGEN; REDUCTION; CEO2; CATALYSTS;
D O I
10.1002/sia.5762
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The initial stages of growth of the nanostructured cerium oxide deposited on the polycrystalline tungsten surface by pulsed laser deposition are studied using XPS technique. The population of Ce (III) and Ce (IV) oxidation states in the deposited CeO2-x layers is determined applying factor analysis method. Tungsten atoms react with oxygen from the cerium oxide nanoparticles already at the room temperature, and a layer of tungsten trioxide is formed at the interface. Gradual heating of the samples up to 900K leads to the increase of the thickness of WO3 oxide layer and a partial reduction of Ce (IV) to Ce (III). The spectra of O (1s) photoelectrons are composed from a signal originating from metal oxides and a signal of surface superoxide and hydroxyl groups. Factor analysis was performed on the spectra of Ce (3d) photoelectrons to determine the position, shape, and intensity of the spectral components belonging to Ce (III) and Ce (IV) oxidation states. We propose a new simple method to generate components of the spectroscopic meaning. The basic idea of our method consists in the use of the slightly positive values instead of zeros to the needle test vector. Two components are required to reproduce the original data within the experimental errors. Copyright (c) 2015 John Wiley & Sons, Ltd.
引用
收藏
页码:663 / 671
页数:9
相关论文
共 38 条
  • [31] A study of GaN nucleation and coalescence in the initial growth stages on nanoscale patterned sapphire substrates via MOCVD
    Chen, Yifan
    Chen, Zhizhong
    Li, Junze
    Chen, Yiyong
    Li, Chengcheng
    Zhan, Jinglin
    Yu, Tongjun
    Kang, Xiangning
    Jiao, Fei
    Li, Shunfeng
    Zhang, Guoyi
    Shen, Bo
    CRYSTENGCOMM, 2018, 20 (42): : 6811 - 6820
  • [32] An in situ x-ray photoelectron spectroscopy study of the initial stages of rf magnetron sputter deposition of indium tin oxide on p-type Si substrate
    Rein, M. H.
    Hohmann, M. V.
    Thogersen, A.
    Mayandi, J.
    Holt, A. O.
    Klein, A.
    Monakhov, E. V.
    APPLIED PHYSICS LETTERS, 2013, 102 (02)
  • [33] Initial growth analysis of ALD Al2O3 film on hydrogen-terminated Si substrate via in situ XPS
    Fukumizu, Hiroyuki
    Sekine, Makoto
    Hori, Masaru
    McIntyre, Paul C.
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 59 (01)
  • [34] A Photoemission Analysis of Gold on Silicon Regarding the Initial Stages of Nanowire Metal-Catalyzed Vapor-Liquid-Solid Growth
    Ferrah, Djawhar
    Penuelas, Jose
    Boudaa, Frederic
    Botella, Claude
    Silly, Mathieu
    Sirotti, Fausto
    Grenet, Genevieve
    JOURNAL OF PHYSICAL CHEMISTRY C, 2022, 126 (44) : 18692 - 18703
  • [35] Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient
    Yamada, Takahiro
    Ito, Joyo
    Asahara, Ryohei
    Watanabe, Kenta
    Nozaki, Mikito
    Nakazawa, Satoshi
    Anda, Yoshiharu
    Ishida, Masahiro
    Ueda, Tetsuzo
    Yoshigoe, Akitaka
    Hosoi, Takuji
    Shimura, Takayoshi
    Watanabe, Heiji
    JOURNAL OF APPLIED PHYSICS, 2017, 121 (03)
  • [36] Application of parallel factor analysis and X-ray photoelectron spectroscopy to the initial stages in oxidation of aluminium - II. The O 1s photoelectron line
    Do, T
    McIntyre, NS
    SURFACE AND INTERFACE ANALYSIS, 1999, 27 (12) : 1037 - 1045
  • [37] Application of parallel factor analysis and X-ray photoelectron spectroscopy to the initial stages in oxidation of aluminium - I. The Al 2p photoelectron line
    Do, T
    McIntyre, NS
    Harshman, RA
    Lundy, ME
    Splinter, SJ
    SURFACE AND INTERFACE ANALYSIS, 1999, 27 (07) : 618 - 628
  • [38] Scanning tunneling microscopy study of the early stages of epitaxial growth of CoSi2 and CoSi films on Si(111) substrate: Surface and interface analysis
    Kotlyar, V. G.
    Alekseev, A. A.
    Olyanicha, D. A.
    Utas, T. V.
    Zotov, A. V.
    Saranin, A. A.
    THIN SOLID FILMS, 2016, 619 : 153 - 159