Spin Relaxation in InGaN Quantum Disks in GaN Nanowires

被引：26

作者：

Banerjee, Animesh ^{[1
]}

Dogan, Fatih ^{[2
]}

Heo, Junseok ^{[1
]}

Manchon, Aurelien ^{[2
]}

Guo, Wei ^{[1
]}

Bhattacharya, Pallab ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ctr Nanoscale Photon & Spintron, Ann Arbor, MI 48109 USA

[2] King Abdullah Univ Sci & Technol, Div Phys Sci & Engn, Thuwal 23955, Saudi Arabia

来源：

NANO LETTERS | 2011年 / 11卷 / 12期

关键词：

Spin lifetime; GaN nanowire; InGaN quantum disk; D'yakonov-Perel'; TRPL; quantum disk-in-nanowire;

D O I：

10.1021/nl203091f

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The spin relaxation time of photoinduced conduction electrons has been measured in InGaN quantum disks in GaN nanowires as a function of temperature and In composition in the disks. The relaxation times are of the order of,similar to 100 ps at 300 K and are weakly dependent on temperature. Theoretical considerations show that the Elliott-Yafet scattering mechanism is essentially absent in these materials and the results are interpreted in terms of the D'yakonov-Perel' relaxation mechanism in the presence of Rashba spin-orbit coupling of the wurtzite structure. The calculated spin relaxation times are in good agreement with the measured values.

引用

页码：5396 / 5400

页数：5

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