Growth of single crystals of Hg(BrxI1-x)2 and their detection capability

被引：3
作者：
Gospodinov, MM
Petrova, D
Yanchev, IY
Daviti, M
Manolopoulou, M
Paraskevopoulos, KM [1 ]
Anagnostopoulos, AN
Polychroniadis, EK
机构：
[1] Aristotle Univ Thessaloniki, Dept Phys, GR-54124 Thessaloniki, Greece
[2] Univ Sofia, Fac Phys, BU-1164 Sofia, Bulgaria
[3] Blagoevgrad Univ, Dept Phys, BU-1700 Blagoevgrad, Bulgaria
[4] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2005年 / 400卷 / 1-2期
关键词：
Hg(BrxI1-x)(2); wide band-gap semiconductors; crystal growth; X- and gamma-ray spectroscopies;
D O I：
10.1016/j.jallcom.2005.03.079
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Hg(BrI1-x)(2) crystals were grown by the Bridgman method for 0.2 < x < 1.0. They were tested for potential implementation as X- and gamma-ray detectors at room temperature. Am-241 and Fe-55 were used as radioactive sources. From the corresponding energy spectra, it is evident that crystals with x = 0.2 show enhanced resolution at low energies (below 200 keV), competing those fabricated from HgI2 and CdTe. Crystals with higher x's were of lower resolution. (c) 2005 Elsevier B.V. All rights reserved.
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页码：249 / 251
页数：3
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