Theoretical investigation of the effect of Ga content on the power conversion efficiency in ZnO/CdS/Cu(In,Ga)Se2 cells

被引：0

作者：

Kassis, A. ^{[1
]}

Saad, M. ^{[1
]}

机构：

[1] Atom Energy Commiss Syria, Damascus, Syria

来源：

INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 2015年 / 53卷 / 04期

关键词：

Cu(In; Ga)Se-2 solar cells; Ga content; Photovoltaic parameters; Interface recombination; Solar cells; SOLAR-CELLS; INTERFACE RECOMBINATION; GRAIN-BOUNDARIES; VOLTAGE; CAPACITANCE; TRANSPORT; DEVICE; STATES; CIGS;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Power conversion efficiency of solar cells is theoretically expected to have its maximum at an absorber energy band gap of E-g approximate to 1.4 eV, but experimentally it is found at E-g = 1.18 eV for ZnO/CdS/Cu(In,Ga)Se-2 cells. In the present work, the explanation of this shift is sought in terms of optical losses through the window layer and interface recombination. The calculated results are compared with theoretical and experimental findings as reported in the literature.

引用

页码：263 / 270

页数：8

共 39 条

[1] [Anonymous], G173 ASTM, VAM15D
[2] [Anonymous], 1982, Solar Cells
[3] Ashcroft N W, 1976, SOLID STATE PHYS, P574
[4] Boer K W, 1990, SURVEY SEMICONDUCTOR, P444
[5] Frequency dependent capacitance and conductance-voltage characteristics of Al/Si3N4/p-Si(100) MIS diodes
Bulbul, M. M.
Zeyrek, S.
[J]. MICROELECTRONIC ENGINEERING, 2006, 83 (11-12) : 2522 - 2526
[6] Fahrenbruch A L, 1983, FUNDAMENTALS SOLAR C, P133
[7] E(K) RELATION FOR A 2-BAND SCHEME OF SEMICONDUCTORS AND APPLICATION TO METAL-SEMICONDUCTOR CONTACT
FLIETNER, H
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 54 (01): : 201 - 208
[8] Band-gap grading in Cu(In,Ga)Se2 solar cells
Gloeckler, M
Sites, JR
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2005, 66 (11) : 1891 - 1894
[9] Efficiency limitations for wide-band-gap chalcopyrite solar cells
Gloeckler, M
Sites, JR
[J]. THIN SOLID FILMS, 2005, 480 : 241 - 245
[10] Gloeckler M, 2003, WORL CON PHOTOVOLT E, P491

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