Dual bias feed SiGe HBT low noise linear amplifier

被引：7

作者：

Taniguchi, E ^{[1
]}

Maeda, K ^{[1
]}

Ikushima, T ^{[1
]}

Sadahiro, K ^{[1
]}

Itoh, K ^{[1
]}

Suematsu, N ^{[1
]}

Takagi, T ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Informat Technol R&D Ctr, Kamakura, Kanagawa 2478501, Japan

来源：

2001 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2001年

关键词：

D O I：

10.1109/RFIC.2001.935681

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 2GHz-band SiGe HBT low noise amplifier (LNA) achieving high saturation power and low distortion performance is described. It has a novel diode / resistor dual bias feed circuit for the base of the HBT to extend its P1dB. In small signal region, the conventional resistor feed circuit is a dominant base current source, but in large signal region, the diode turns on and the diode feed circuit can supply base current like a voltage source which allows higher output power and linearity. The fabricated dual feed type LNA shows the P1dB improvement of 5dB compared with the conventional resistor feed LNA.

引用

页码：227 / 230

页数：4

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