Band offsets of InGaP/GaAs heterojunctions by scanning tunneling spectroscopy

被引：34
|
作者：
Dong, Y. [1 ]
Feenstra, R. M. [1 ]
Semtsiv, M. P. [2 ]
Masselink, W. T. [2 ]
机构：
[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA
[2] Humboldt Univ, Dept Phys, D-10115 Berlin, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 07期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2902828
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Scanning tunneling microscopy and spectroscopy are used to study InGaP/GaAs heterojunctions with InGaAs-like interfaces. Band offsets are probed using conductance spectra, with tip-induced band bending accounted for using three-dimensional electrostatic potential simulations together with a planar computation of the tunnel current. Curve fitting of theory to experiment is performed. Using an InGaP band gap of 1.90 eV, which is appropriate to the disordered InGaP alloy, a valence band offset of 0.38 +/- 0.01 eV is deduced along with the corresponding conduction band offset of 0.10 +/- 0.01 eV (type I band alignment). (c) 2008 American Institute of Physics.
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页数：12
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