Band offsets of InGaP/GaAs heterojunctions by scanning tunneling spectroscopy

被引：34

作者：

Dong, Y. ^{[1
]}

Feenstra, R. M. ^{[1
]}

Semtsiv, M. P. ^{[2
]}

Masselink, W. T. ^{[2
]}

机构：

[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

[2] Humboldt Univ, Dept Phys, D-10115 Berlin, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2902828

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Scanning tunneling microscopy and spectroscopy are used to study InGaP/GaAs heterojunctions with InGaAs-like interfaces. Band offsets are probed using conductance spectra, with tip-induced band bending accounted for using three-dimensional electrostatic potential simulations together with a planar computation of the tunnel current. Curve fitting of theory to experiment is performed. Using an InGaP band gap of 1.90 eV, which is appropriate to the disordered InGaP alloy, a valence band offset of 0.38 +/- 0.01 eV is deduced along with the corresponding conduction band offset of 0.10 +/- 0.01 eV (type I band alignment). (c) 2008 American Institute of Physics.

引用

页数：12

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