Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors

被引：2

作者：

Sasangka, W. A. ^{[1
]}

Gao, Y. ^{[1
,2
]}

Gan, C. L. ^{[1
,2
]}

Thompson, C. V. ^{[3
]}

机构：

[1] Singapore MIT Alliance Res & Technol, Low Energy Elect Syst, Singapore 138602, Singapore

[2] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

MICROELECTRONICS RELIABILITY | 2018年 / 88-90卷

基金：

新加坡国家研究基金会;

关键词：

AlGaN/GaN HEMTs; Leakage current; Carbon impurities; TEM; EELS; Schottky barrier height; CURRENT MECHANISMS; GAN; RELIABILITY; HEMTS;

D O I：

10.1016/j.microrel.2018.06.048

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have systematically studied the origin of high gate-leakage currents in AlGaN/GaN high electron mobility transistors (HEMTs). Devices that initially had a low gate-leakage current (good devices) are compared with ones that had a high gate-leakage current (bad devices). The apparent zero-bias Schottky barrier height of bad devices (0.4 < phi(BO) < 0.62 eV) was found to be lower than that of the good devices (phi(BO) = 0.79 eV). From transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) analysis, we found that this difference is due to the presence of carbon impurities in the nickel layer in the gate region.

引用

页码：393 / 396

页数：4

共 50 条

[41] Role of barrier structure in current collapse of AlGaN/GaN high electron mobility transistors
DasGupta, Sandeepan
Biedermann, Laura B.
Sun, Min
Kaplar, Robert
Marinella, Matthew
Zavadil, Kevin R.
Atcitty, Stan
Palacios, Tomas
APPLIED PHYSICS LETTERS, 2012, 101 (24)
[42] Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors
Xu, Ning
Hao, Ronghui
Chen, Fu
Zhang, Xiaodong
Zhang, Hui
Zhang, Peipei
Ding, Xiaoyu
Song, Liang
Yu, Guohao
Cheng, Kai
Cai, Yong
Zhang, Baoshun
APPLIED PHYSICS LETTERS, 2018, 113 (15)
[43] AlGaN/GaN HEMTs With Low Leakage Current and High On/Off Current Ratio
Lin, Yu-Syuan
Lain, Yi-Wei
Hsu, Shawn S. H.
IEEE ELECTRON DEVICE LETTERS, 2010, 31 (02) : 102 - 104
[44] Charge storage impact on input capacitance in p-GaN gate AlGaN/GaN power high-electron-mobility transistors
Wang, Fangzhou
Chen, Wanjun
Li, Xuan
Sun, Ruize
Xu, Xiaorui
Xin, Yajie
Wang, Zeheng
Shi, Yijun
Xia, Yun
Liu, Chao
Zhou, Jianjun
Zhou, Qi
Zhang, Bo
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 53 (30)
[45] Reduction of the Gate Leakage Current in Binary-trench-insulated Gate AlGaN/GaN High-electron-mobility Transistors
Kim, Su Jin
Kim, Doug Ho
Kim, Jae Moo
Jung, Kang Min
Kim, Tae Geun
Choi, Hong Goo
Hahn, Cheol-Koo
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 55 (01) : 356 - 361
[46] Degradation of AlGaN/GaN high electron mobility transistors related to hot electrons
Meneghini, Matteo
Stocco, Antonio
Silvestri, Riccardo
Meneghesso, Gaudenzio
Zanoni, Enrico
APPLIED PHYSICS LETTERS, 2012, 100 (23)
[47] Performance of AlGaN/GaN High-Electron Mobility Transistors With AlSiN Passivation
Harvard, Ekaterina
Brown, Richard
Shealy, James R.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (01) : 87 - 94
[48] Impact of Gate and Passivation Structures on Current Collapse of AlGaN/GaN High-Electron-Mobility Transistors under Off-State-Bias Stress
Tajima, Masafumi
Hashizume, Tamotsu
JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (06)
[49] Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors
Lee, Finella
Su, Liang-Yu
Wang, Chih-Hao
Wu, Yuh-Renn
Huang, Jianjang
IEEE ELECTRON DEVICE LETTERS, 2015, 36 (03) : 232 - 234
[50] Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors
Meneghini, M.
Stocco, A.
Ronchi, N.
Rossi, F.
Salviati, G.
Meneghesso, G.
Zanoni, E.
APPLIED PHYSICS LETTERS, 2010, 97 (06)

← 1 2 3 4 5 →