Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors

被引：2

作者：

Sasangka, W. A. ^{[1
]}

Gao, Y. ^{[1
,2
]}

Gan, C. L. ^{[1
,2
]}

Thompson, C. V. ^{[3
]}

机构：

[1] Singapore MIT Alliance Res & Technol, Low Energy Elect Syst, Singapore 138602, Singapore

[2] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

MICROELECTRONICS RELIABILITY | 2018年 / 88-90卷

基金：

新加坡国家研究基金会;

关键词：

AlGaN/GaN HEMTs; Leakage current; Carbon impurities; TEM; EELS; Schottky barrier height; CURRENT MECHANISMS; GAN; RELIABILITY; HEMTS;

D O I：

10.1016/j.microrel.2018.06.048

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have systematically studied the origin of high gate-leakage currents in AlGaN/GaN high electron mobility transistors (HEMTs). Devices that initially had a low gate-leakage current (good devices) are compared with ones that had a high gate-leakage current (bad devices). The apparent zero-bias Schottky barrier height of bad devices (0.4 < phi(BO) < 0.62 eV) was found to be lower than that of the good devices (phi(BO) = 0.79 eV). From transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) analysis, we found that this difference is due to the presence of carbon impurities in the nickel layer in the gate region.

引用

页码：393 / 396

页数：4

共 50 条

[31] Local gate leakage current induced by inhomogeneous epitaxial growth in AlGaN/GaN high-electron-mobility transistors
Narita, Tomotaka
Wakejima, Akio
Egawa, Takashi
APPLIED PHYSICS EXPRESS, 2016, 9 (03)
[32] Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing
Liu, Lu
Xi, Yuyin
Ahn, Shihyun
Ren, Fan
Gila, Brent P.
Pearton, Stephen J.
Kravohenko, Ivan I.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 32 (05):
[33] Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors
Xu, Ning
Hao, Ronghui
Chen, Fu
Zhang, Xiaodong
Zhang, Hui
Zhang, Peipei
Ding, Xiaoyu
Song, Liang
Yu, Guohao
Cheng, Kai
Cai, Yong
Zhang, Baoshun
APPLIED PHYSICS LETTERS, 2018, 113 (15)
[34] Mechanisms of RF current collapse in AlGaN-GaN high electron mobility transistors
Faqir, Mustapha
Verzellesi, Giovanni
Chini, Alessandro
Fantini, Fausto
Danesin, Francesca
Meneghesso, Gaudenzio
Zanoni, Enrico
Dua, Christian
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2008, 8 (02) : 240 - 247
[35] Dispersion effect on the current voltage characteristic of AlGaN/GaN high electron mobility transistors
Pu Yan
Pang Lei
Chen Xiao-Juan
Yuan Ting-Ting
Luo Wei-Jun
Liu Xin-Yu
CHINESE PHYSICS B, 2011, 20 (09)
[36] Different Gate Current Degradation Mechanisms in AlGaN/GaN High Electron Mobility Transistors
Chen, Wei-Wei
Hu, Kuan
Li, Xiao-Xiao
Yang, Zhang
Yang, Fei
Wang, Lei
Ma, Xiao-Hua
2022 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS, IMWS-AMP, 2022,
[37] Dispersion effect on the current voltage characteristic of AlGaN/GaN high electron mobility transistors
蒲颜
庞磊
陈晓娟
袁婷婷
罗卫军
刘新宇
Chinese Physics B, 2011, 20 (09) : 404 - 410
[38] Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors
Klein, PB
Binari, SC
Ikossi-Anastasiou, K
Wickenden, AE
Koleske, DD
Henry, RL
Katzer, DS
ELECTRONICS LETTERS, 2001, 37 (10) : 661 - 662
[39] Role of barrier structure in current collapse of AlGaN/GaN high electron mobility transistors
DasGupta, Sandeepan
Biedermann, Laura B.
Sun, Min
Kaplar, Robert
Marinella, Matthew
Zavadil, Kevin R.
Atcitty, Stan
Palacios, Tomas
APPLIED PHYSICS LETTERS, 2012, 101 (24)
[40] Electrothermal analysis of AlGaN/GaN high electron mobility transistors
Sridharan, Sriraaman
Venkatachalam, Anusha
Yoder, P. D.
JOURNAL OF COMPUTATIONAL ELECTRONICS, 2008, 7 (03) : 236 - 239

← 1 2 3 4 5 →