Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors

被引：2

作者：

Sasangka, W. A. ^{[1
]}

Gao, Y. ^{[1
,2
]}

Gan, C. L. ^{[1
,2
]}

Thompson, C. V. ^{[3
]}

机构：

[1] Singapore MIT Alliance Res & Technol, Low Energy Elect Syst, Singapore 138602, Singapore

[2] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

MICROELECTRONICS RELIABILITY | 2018年 / 88-90卷

基金：

新加坡国家研究基金会;

关键词：

AlGaN/GaN HEMTs; Leakage current; Carbon impurities; TEM; EELS; Schottky barrier height; CURRENT MECHANISMS; GAN; RELIABILITY; HEMTS;

D O I：

10.1016/j.microrel.2018.06.048

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have systematically studied the origin of high gate-leakage currents in AlGaN/GaN high electron mobility transistors (HEMTs). Devices that initially had a low gate-leakage current (good devices) are compared with ones that had a high gate-leakage current (bad devices). The apparent zero-bias Schottky barrier height of bad devices (0.4 < phi(BO) < 0.62 eV) was found to be lower than that of the good devices (phi(BO) = 0.79 eV). From transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) analysis, we found that this difference is due to the presence of carbon impurities in the nickel layer in the gate region.

引用

页码：393 / 396

页数：4

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