Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors

被引：2

作者：

Sasangka, W. A. ^{[1
]}

Gao, Y. ^{[1
,2
]}

Gan, C. L. ^{[1
,2
]}

Thompson, C. V. ^{[3
]}

机构：

[1] Singapore MIT Alliance Res & Technol, Low Energy Elect Syst, Singapore 138602, Singapore

[2] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

MICROELECTRONICS RELIABILITY | 2018年 / 88-90卷

基金：

新加坡国家研究基金会;

关键词：

AlGaN/GaN HEMTs; Leakage current; Carbon impurities; TEM; EELS; Schottky barrier height; CURRENT MECHANISMS; GAN; RELIABILITY; HEMTS;

D O I：

10.1016/j.microrel.2018.06.048

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have systematically studied the origin of high gate-leakage currents in AlGaN/GaN high electron mobility transistors (HEMTs). Devices that initially had a low gate-leakage current (good devices) are compared with ones that had a high gate-leakage current (bad devices). The apparent zero-bias Schottky barrier height of bad devices (0.4 < phi(BO) < 0.62 eV) was found to be lower than that of the good devices (phi(BO) = 0.79 eV). From transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) analysis, we found that this difference is due to the presence of carbon impurities in the nickel layer in the gate region.

引用

页码：393 / 396

页数：4

共 50 条

[1] Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors
Ren Jian
Yan Da-Wei
Gu Xiao-Feng
ACTA PHYSICA SINICA, 2013, 62 (15)
[2] Study of surface leakage current of AlGaN/GaN high electron mobility transistors
Chen, YongHe
Zhang, Kai
Cao, MengYi
Zhao, ShengLei
Zhang, JinCheng
Ma, XiaoHua
Hao, Yue
APPLIED PHYSICS LETTERS, 2014, 104 (15)
[3] On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors
Yan, Dawei
Lu, Hai
Cao, Dongsheng
Chen, Dunjun
Zhang, Rong
Zheng, Youdou
APPLIED PHYSICS LETTERS, 2010, 97 (15)
[4] Reduction of Gate Leakage Current on AlGaN/GaN High Electron Mobility Transistors by Electron-Beam Irradiation
Oh, S. K.
Song, C. G.
Jang, T.
Kim, Kwang-Choong
Jo, Y. J.
Kwak, J. S.
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2013, 13 (03) : 1738 - 1740
[5] Model the AlGaN/GaN High Electron Mobility Transistors
Wang, Yan
Cheng, Xiaoxu
Li, Xiaojian
NANOTECHNOLOGY 2012, VOL 2: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, 2012, : 738 - 743
[6] New field plate structure for suppression of leakage current of AlGaN/GaN high electron mobility transistors
Choi, Young-Hwan
Ha, Min-Woo
Lim, Jiyong
Han, Min-Koo
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (4B): : 2287 - 2290
[7] The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors
Choi, Sukwon
Heller, Eric
Dorsey, Donald
Vetury, Ramakrishna
Graham, Samuel
JOURNAL OF APPLIED PHYSICS, 2013, 114 (16)
[8] Current relaxation analysis in AlGaN/GaN high electron mobility transistors
Polyakov, Alexander Y.
Smirnov, N. B.
Shchemerov, Ivan V.
Lee, In-Hwan
Jang, Taehoon
Dorofeev, Alexey A.
Gladysheva, Nadezhda B.
Kondratyev, Eugene S.
Turusova, Yulia A.
Zinovyev, Roman A.
Turutin, A. V.
Ren, Fan
Pearton, S. J.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2017, 35 (01):
[9] Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN
Li, Y.
Ng, G. I.
Arulkumaran, S.
Ye, G.
Liu, Z. H.
Ranjan, K.
Ang, K. S.
JOURNAL OF APPLIED PHYSICS, 2017, 121 (04)
[10] Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors
Rai, Narendra
Sarkar, Ritam
Mahajan, Ashutosh
Laha, Apurba
Saha, Dipankar
Ganguly, Swaroop
JOURNAL OF APPLIED PHYSICS, 2023, 134 (24)

← 1 2 3 4 5 →