In-situ analysis of microwave conductivity and impedance spectroscopy for evaluation of charge carrier dynamics at interfaces

被引：11

作者：

Choi, Wookjin ^{[1
]}

Inoue, Junichi ^{[1
]}

Tsutsui, Yusuke ^{[1
]}

Sakurai, Tsuneaki ^{[1
]}

Seki, Shu ^{[1
]}

机构：

[1] Kyoto Univ, Grad Sch Engn, Dept Mol Engn, Kyoto 6158510, Japan

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 20期

基金：

日本学术振兴会;

关键词：

FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; LIGHT-EMITTING-DIODES; ORGANIC SEMICONDUCTORS; INVERSE-PHOTOEMISSION; ELECTRONIC-STRUCTURES; TRANSPORT; MOBILITY; STATES; METAL;

D O I：

10.1063/1.5003207

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A unique concerted analysis comprising non-contact microwave conductivity measurements and impedance spectroscopy was developed to simultaneously assess the charge carrier mobility and injection barriers. The frequency dependence of the microwave conductivity as well as the electrical current was analyzed by applying sinusoidal voltage to determine the equivalent circuit parameters. Based on the temperature dependence of the circuit parameters, the energy of the injection barrier was estimated to be 0.4 eV with the Richardson-Schottky model, and the band-like transport was confirmed with the negative temperature coefficient with the beta value of 1.4 in the intra-layer conduction of C8-BTBT. In contrast, the increase in the resistance of the C8-BTBT layer with decreasing temperature implied the occurrence of hopping-like transport in the inter-layer conduction of C8-BTBT. Published by AIP Publishing.

引用

页数：5

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