atomic force microscopy;
crystal structure;
laser epitaxy;
perovskites;
ferroelectric materials;
magnetic materials;
D O I:
10.1016/j.jcrysgro.2004.11.406
中图分类号:
O7 [晶体学];
学科分类号:
0702 ;
070205 ;
0703 ;
080501 ;
摘要:
(0 0 l)-oriented Ba0.7Sr0.3TiO3(BST)/La0.67Sr0.33MnO3 (LSMO) heterostructures were deposited on (0 0 1) LaAlO3 substrates by pulsed laser deposition. We found that both the crystallinity and grain size of the BST films increased with increasing deposition temperature from 550 to 850 degrees C. The ferroelectric properties of the BST/LSMO heterostructures were also enhanced by increasing the deposition temperature, while the largest remnant polarization and saturation polarization were 2.6 and 9.1 mu C/cm(2), respectively. Correspondingly, the dielectric constant (zero bias) increased from 592 to 852 and the dielectric tunability (220 kV/cm) increased from 9.61 to 39.3%, which may be attributed to the better crystallinity and larger grain size of the BST films. As for the current-voltage characteristics of the BST/LSMO heterostructures, the leakage current was higher for the larger grain sizes. Further study on the leakage current induced by grain size was carried out as well. (c) 2004 Elsevier B.V. All rights reserved.
机构:
USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Cole, MW
Nothwang, WD
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机构:
USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Nothwang, WD
Hubbard, C
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机构:
USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Hubbard, C
Ngo, E
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机构:
USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Ngo, E
Ervin, M
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机构:
USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
机构:
Samsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South KoreaSamsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South Korea
Hwang, CS
Lee, BT
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Samsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South KoreaSamsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South Korea
Lee, BT
Kang, CS
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机构:
Samsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South KoreaSamsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South Korea
Kang, CS
Kim, JW
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Samsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South KoreaSamsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South Korea
Kim, JW
Lee, KH
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机构:
Samsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South KoreaSamsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South Korea
Lee, KH
Cho, HJ
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Samsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South KoreaSamsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South Korea
Cho, HJ
Horii, H
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Samsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South KoreaSamsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South Korea
Horii, H
Kim, WD
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Samsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South KoreaSamsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South Korea
Kim, WD
Lee, SI
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Samsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South KoreaSamsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South Korea
Lee, SI
Roh, YB
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机构:
Samsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South KoreaSamsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South Korea
Roh, YB
Lee, MY
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h-index: 0
机构:
Samsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South KoreaSamsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South Korea
机构:
USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Cole, MW
Nothwang, WD
论文数: 0引用数: 0
h-index: 0
机构:
USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Nothwang, WD
Hubbard, C
论文数: 0引用数: 0
h-index: 0
机构:
USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Hubbard, C
Ngo, E
论文数: 0引用数: 0
h-index: 0
机构:
USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Ngo, E
Ervin, M
论文数: 0引用数: 0
h-index: 0
机构:
USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
机构:
Samsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South KoreaSamsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South Korea
Hwang, CS
Lee, BT
论文数: 0引用数: 0
h-index: 0
机构:
Samsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South KoreaSamsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South Korea
Lee, BT
Kang, CS
论文数: 0引用数: 0
h-index: 0
机构:
Samsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South KoreaSamsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South Korea
Kang, CS
Kim, JW
论文数: 0引用数: 0
h-index: 0
机构:
Samsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South KoreaSamsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South Korea
Kim, JW
Lee, KH
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h-index: 0
机构:
Samsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South KoreaSamsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South Korea
Lee, KH
Cho, HJ
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h-index: 0
机构:
Samsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South KoreaSamsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South Korea
Cho, HJ
Horii, H
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h-index: 0
机构:
Samsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South KoreaSamsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South Korea
Horii, H
Kim, WD
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h-index: 0
机构:
Samsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South KoreaSamsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South Korea
Kim, WD
Lee, SI
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h-index: 0
机构:
Samsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South KoreaSamsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South Korea
Lee, SI
Roh, YB
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h-index: 0
机构:
Samsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South KoreaSamsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South Korea
Roh, YB
Lee, MY
论文数: 0引用数: 0
h-index: 0
机构:
Samsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South KoreaSamsung Elect, Semicond R&D Ctr, Memory Proc Dev Team, Kyungki Do 449900, South Korea