Anisotropy of inversion channel mobility in 4H-and 6H-SIC MOSFETs on (11(2)over-bar0) face

被引：37

作者：

Yano, H

Hirao, T

Kimoto, T

Matsunami, H

Asano, K

Sugawara, Y

机构：

[1] Kyoto Univ, Dept ELect Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan

[2] Kansai Elect Power Co, Tech Res Ctr, Amagasaki, Hyogo 6610974, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

(1120) face; anisotropy; electron trap; inversion channel mobility; MOSFETs; scattering mechanisms; threshold voltage;

D O I：

10.4028/www.scientific.net/MSF.338-342.1105

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An anisotropy of inversion channel mobility along [0001] and [1 (1) over bar 00] in the (11 (2) over bar0) face for 4H- and 6H-SiC MOSFETs was reported. A dramatic improvement of inversion channel mobility was successfully achieved especially in 4H-SiC by using the (11 (2) over bar0) face compared with the conventional (0001) Si-face. From the temperature dependence of channel mobility, phonon scattering is revealed as a dominant scattering mechanism of elections in MOSFETs on the (11 (2) over bar0) face.

引用

页码：1105 / 1108

页数：4

共 9 条

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[2]

2-F

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