Boosted charge extraction of NbOx-enveloped SnO2 nanocrystals enables 24% efficient planar perovskite solar cells

被引:141
作者
Yuan, Ruihan [1 ]
Cai, Bing [1 ]
Lv, Yinhua [1 ]
Gao, Xiang [2 ]
Gu, Jinwen [3 ]
Fan, Zhenghui [1 ]
Liu, Xinhang [1 ]
Yang, Chi [4 ]
Liu, Mingzhen [4 ]
Zhang, Wen-Hua [1 ]
机构
[1] China Acad Engn Phys, Inst Chem Mat, Sichuan Res Ctr New Mat, 596 Yinhe Rd, Chengdu 610200, Peoples R China
[2] Ctr High Pressure Sci & Technol Adv Res, 10 Xibeiwang East Rd,Haidian Dist, Beijing 100094, Peoples R China
[3] Univ Elect Sci & Technol China, Sch Mat & Energy, Chengdu 611731, Peoples R China
[4] Chengdu Univ, Inst Adv Study, 2025 Chengluo Ave, Chengdu 610106, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
ELECTRON SELECTIVE CONTACT; TIN OXIDE; TEMPERATURE; PERFORMANCE; RECOMBINATION; HYSTERESIS; TRANSPORT; VOLTAGE; LAYER;
D O I
10.1039/d1ee01519b
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Planar perovskite solar cells (PSCs) have attracted extensive research attention owing to their simple architecture and manufacturing process. Improving the charge extraction ability of electron transport materials (ETMs) is imperative to enhance their power conversion efficiencies (PCEs). Herein, we report low-temperature solution-processed SnO2 nanocrystals (SnO2 NCs) enveloped by amorphous NbOx (SnO2/NbOx) as efficient ETMs for planar PSCs, achieving an impressive PCE of 24.01% with negligible hysteresis, which is significantly superior to that of PSCs made from commercial SnO2 (with PCEs up to 21.96%) and self-developed SnO2 NCs (with PCEs up to 23.01%). The NbOx layer can simultaneously passivate defects at the ETMs/perovskite interface, promote charge extraction from perovskites, and improve the crystallinity of perovskite films. The unencapsulated PSC retains over 85% of its initial efficiency after 1000 h of light soaking (one sun), showing remarkable device stability. Furthermore, the low-temperature processed SnO2/NbOx ETMs are compatible with flexible substrates and present a maximum PCE of 20.00%. This work offers a facile approach to low-temperature processed ETMs with boosted carrier extraction ability, affording excellent device efficiency and stability for planar PSCs.
引用
收藏
页码:5074 / 5083
页数:10
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