Room-temperature intracavity difference-frequency generation in butt-joint diode lasers

被引：21

作者：

Zvonkov, B. N. ^{[1
]}

Biryukov, A. A. ^{[1
]}

Ershov, A. V. ^{[1
]}

Nekorkin, S. M. ^{[1
]}

Aleshkin, V. Ya. ^{[2
]}

Gavrilenko, V. I. ^{[2
]}

Dubinov, A. A. ^{[2
]}

Maremyanin, K. V. ^{[2
]}

Morozov, S. V. ^{[2
]}

Belyanin, A. A. ^{[3
,4
]}

Kocharovsky, V. V. ^{[3
,4
]}

Kocharovsky, Vl. V. ^{[3
,4
]}

机构：

[1] Nizhny Novgord State Univ, Phys Tech Inst, Nizhnii Novgorod 603950, Russia

[2] RAS, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

[3] RAS, Inst Appl Sci, Nizhnii Novgorod 603950, Russia

[4] Texas A&M Univ, Dept Phys, College Stn, TX 77843 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 02期

基金：

俄罗斯基础研究基金会; 美国国家科学基金会;

关键词：

D O I：

10.1063/1.2835048

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We observe room-temperature intracavity difference-frequency generation in the mid-infrared range in a butt-joint GaAs/InGaAs/InGaP quantum-well laser diode which supports lasing at two closely spaced wavelengths in the near-infrared range around 1 mu m. We employ a special asymmetric waveguide design and a low-doped substrate that minimize midinfrared losses and phase mismatch for the difference-frequency generation process.

引用

页数：3

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