Seedless Copper Electrodeposition onto Tungsten Diffusion Barrier

被引:22
|
作者
Park, Kye-Sun [1 ]
Kim, Sunjung [1 ]
机构
[1] Univ Ulsan, Sch Mat Sci & Engn, Ulsan 680749, South Korea
关键词
NUCLEATION; FILMS; CU; METALLIZATION; DEPOSITION; RUTHENIUM;
D O I
10.1149/1.3491351
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Copper was electrodeposited directly onto a sputter-deposited tungsten diffusion barrier layer in an acidic copper-ammonium-citrate (Cu-NH(3)-Cit) bath. The nucleation characteristic of copper deposits according to applied cathodic potential was investigated. The nucleation mode, nuclei density, and dominant copper species to be preferentially reduced were critically dependent on the applied cathodic potential. Pure instantaneous or progressive nucleation of copper was not observed, but instead, mixed nucleation mechanisms appeared. For low cathodic potentials, the copper deposits, which were reduced mainly from cupric ions, showed consequently a progressive nucleation characteristic despite initial instantaneous nucleation. For large cathodic potentials, the instantaneous nucleation of copper was achieved from the reduction of copper complexes following the early stage of progressive nucleation. The copper nuclei density of 2 x 10(10) cm(-2) calculated for filling the sub-70 nm damascene structures was approached by applying large cathodic potentials. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3491351] All rights reserved.
引用
收藏
页码:D609 / D613
页数:5
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