Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation

被引：21

作者：

Magalhaes, S. ^{[1
,2
,3
]}

Peres, M. ^{[2
,3
]}

Fellmann, V. ^{[4
]}

Daudin, B. ^{[4
]}

Neves, A. J. ^{[2
,3
]}

Alves, E. ^{[1
,5
]}

Monteiro, T. ^{[2
,3
]}

Lorenz, K. ^{[1
,5
]}

机构：

[1] Inst Tecnol & Nucl, P-2685953 Sacavem, Portugal

[2] Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal

[3] Univ Aveiro, I3N, P-3810193 Aveiro, Portugal

[4] CEA, Dept Rech Fondamentale Mat Condensee, CNRS Grp, F-38054 Grenoble 9, France

[5] CFNUL, P-1649003 Lisbon, Portugal

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 08期

关键词：

EARTH-DOPED GAN; OPTICAL-PROPERTIES; X-RAY; PR;

D O I：

10.1063/1.3496624

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-assembled GaN quantum dots (QDs) stacked in superlattices (SL) with A1N spacer layers were implanted with Europium ions to fluences of 10(13), 10(14), and 10(15) cm(-2). The damage level introduced in the QDs by the implantation stays well below that of thick GaN epilayers. For the lowest fluence, the structural properties remain unchanged after implantation and annealing while for higher fluences the implantation damage causes an expansion of the SL in the [0001] direction which increases with implantation fluence and is only partly reversed after thermal annealing at 1000 C. Nevertheless, in all cases, the SL quality remains very good after implantation and annealing with Eu ions incorporated preferentially into near-substitutional cation sites. Eu3+ optical activation is achieved after annealing in all samples. In the sample implanted with the lowest fluence, the Eu3+ emission arises mainly from Eu incorporated inside the QDs while for the higher fluences only the emission from Eu inside the A1N-buffer, capping, and spacer layers is observed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3496624]

引用

页数：6

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