Thermal stability of alumina thin films containing γ-Al2O3 phase prepared by reactive magnetron sputtering

被引：126

作者：

Musil, J. ^{[1
,2
]}

Blazek, J. ^{[1
]}

Zeman, P. ^{[1
]}

Proksova, S. ^{[1
]}

Sasek, M. ^{[1
]}

Cerstvy, R. ^{[1
]}

机构：

[1] Univ W Bohemia, Dept Phys, Fac Sci Appl, CZ-30614 Plzen, Czech Republic

[2] Acad Sci Czech Republic, Inst Phys, CZ-18221 Prague 8, Czech Republic

来源：

APPLIED SURFACE SCIENCE | 2010年 / 257卷 / 03期

关键词：

Al2O3 (alumina); Annealing; Thermal stability; Nanocrystalline material; Sputtering; DEPOSITED ALUMINA; HARD COATINGS; LOW-TEMPERATURES; AL2O3; LAYERS; CYLINDRICAL MAGNETRON; SUBSTRATE-TEMPERATURE; ALPHA-AL2O3; MICROSTRUCTURE; TRANSFORMATION; TEXTURE;

D O I：

10.1016/j.apsusc.2010.07.107

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The paper reports on thermal stability of alumina thin films containing gamma-Al2O3 phase and its conversion to a thermodynamically stable alpha-Al2O3 phase during a post-deposition equilibrium thermal annealing. The films were prepared by reactive magnetron sputtering and subsequently post-deposition annealing was carried out in air at temperatures ranging from 700 degrees C to 1150 degrees C and annealing times up to 5 h using a thermogravimetric system. The evolution of the structure was investigated by means of X-ray diffraction after cooling down of the films. It was found that (1) the nanocrystalline gamma-Al2O3 phase in the films is thermally stable up to 1000 degrees C even after 5 h of annealing, (2) the nanocrystalline theta-Al2O3 phase was observed in a narrow time and temperature region at >= 1050 degrees C, and (3) annealing at 1100 degrees C for 2 h resulted in a dominance of the alpha-Al2O3 phase only in the films with a sufficient thickness. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1058 / 1062

页数：5

共 45 条

[11] α-Cr2O3 template-texture effect on α-Al2O3 thin-film growth [J].

Eklund, P. ;

Sridharan, M. ;

Sillassen, M. ;

Bottiger, J. .

THIN SOLID FILMS, 2008, 516 (21) :7447-7450

[12] Thermal Stability and Phase Transformations of γ-/Amorphous-Al2O3 Thin Films [J].

Eklund, Per ;

Sridharan, Madanagurusamy ;

Singh, Gurvinder ;

Bottiger, Jorgen .

PLASMA PROCESSES AND POLYMERS, 2009, 6 :S907-S911

[13] The deposition of hard crystalline Al2O3 layers by means of bipolar pulsed magnetron sputtering [J].

Fietzke, F ;

Goedicke, K ;

Hempel, W .

SURFACE & COATINGS TECHNOLOGY, 1996, 86-7 (1-3) :657-663

[14] The influence of plasma power on the temperature-dependant conductivity and on the wet chemical etch rate of sputter-deposited alumina thin films [J].

Fricke, S. ;

Friedberger, A. ;

Schmid, U. .

SURFACE & COATINGS TECHNOLOGY, 2009, 203 (19) :2830-2834

[15]

Gitzen W.H., 1970, ALUMINA CERAMIC MAT

[16]

HELLWEGE KH, 1975, CRYSTAL STRUCTURE DA, P46

[17] MATERIAL SELECTION FOR HARD COATINGS [J].

HOLLECK, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (06) :2661-2669

[18] Localized epitaxial growth of α-Al2O3 thin films on Cr2O3 template by sputter deposition at low substrate temperature [J].

Jin, P ;

Nakao, S ;

Wang, SX ;

Wang, LM .

APPLIED PHYSICS LETTERS, 2003, 82 (07) :1024-1026

[19] Structure-property correlations in aluminum oxide thin films grown by reactive AC magnetron sputtering [J].

Khanna, Atul ;

Bhat, Deepak G. ;

Harris, Adrian ;

Beake, Ben D. .

SURFACE & COATINGS TECHNOLOGY, 2006, 201 (3-4) :1109-1116

[20] Crystalline alumina coatings by reactive ac magnetron sputtering [J].

Khanna, Atul ;

Bhat, Deepak G. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2007, 25 (02) :L5-L8

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