Thermal stability of alumina thin films containing γ-Al2O3 phase prepared by reactive magnetron sputtering

被引：126

作者：

Musil, J. ^{[1
,2
]}

Blazek, J. ^{[1
]}

Zeman, P. ^{[1
]}

Proksova, S. ^{[1
]}

Sasek, M. ^{[1
]}

Cerstvy, R. ^{[1
]}

机构：

[1] Univ W Bohemia, Dept Phys, Fac Sci Appl, CZ-30614 Plzen, Czech Republic

[2] Acad Sci Czech Republic, Inst Phys, CZ-18221 Prague 8, Czech Republic

来源：

APPLIED SURFACE SCIENCE | 2010年 / 257卷 / 03期

关键词：

Al2O3 (alumina); Annealing; Thermal stability; Nanocrystalline material; Sputtering; DEPOSITED ALUMINA; HARD COATINGS; LOW-TEMPERATURES; AL2O3; LAYERS; CYLINDRICAL MAGNETRON; SUBSTRATE-TEMPERATURE; ALPHA-AL2O3; MICROSTRUCTURE; TRANSFORMATION; TEXTURE;

D O I：

10.1016/j.apsusc.2010.07.107

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The paper reports on thermal stability of alumina thin films containing gamma-Al2O3 phase and its conversion to a thermodynamically stable alpha-Al2O3 phase during a post-deposition equilibrium thermal annealing. The films were prepared by reactive magnetron sputtering and subsequently post-deposition annealing was carried out in air at temperatures ranging from 700 degrees C to 1150 degrees C and annealing times up to 5 h using a thermogravimetric system. The evolution of the structure was investigated by means of X-ray diffraction after cooling down of the films. It was found that (1) the nanocrystalline gamma-Al2O3 phase in the films is thermally stable up to 1000 degrees C even after 5 h of annealing, (2) the nanocrystalline theta-Al2O3 phase was observed in a narrow time and temperature region at >= 1050 degrees C, and (3) annealing at 1100 degrees C for 2 h resulted in a dominance of the alpha-Al2O3 phase only in the films with a sufficient thickness. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1058 / 1062

页数：5

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