Processing and Properties of Ba0.5Sr0.5TiO3/Bi1.5Zn1.0Nb1.5O7/Ba0.5Sr0.5TiO3 Sandwich Thin Films for Tunable Microwave Devices

被引:1
作者
Yan, Xin [1 ]
Ren, Wei [2 ]
Shi, Peng [2 ]
Wu, Xiaoqing [2 ]
Chen, Xiaofeng [2 ]
Yao, Xi [2 ]
机构
[1] Changan Univ, Sch Mat Sci & Engn, Xian 710064, Peoples R China
[2] Xi An Jiao Tong Univ, Elect Mat Res Lab, Key Lab, Minist Educ, Xian 710049, Peoples R China
基金
中国国家自然科学基金;
关键词
Sandwich films; sol-gel process; tunability; DIELECTRIC-PROPERTIES; (BA;
D O I
10.1080/00150193.2010.484317
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ba0.5Sr0.5TiO3/Bi1.5Zn1.0Nb1.5O7/Ba0.5Sr0.5TiO3 (BST/BZN/BST) sandwich films have been prepared by a sol-gel method. The sandwich thin films were deposited alternatively by spin coating technique and crystallized by rapid thermal annealing. The structures and morphologies of BST/BZN/BST sandwich thin films were analyzed by XRD and FESEM. The XRD results show that the cubic pyrochlore BZN phase and the perovskite BST phase can be observed in the sandwich thin films annealed at 750 degrees C. The diffraction pattern confirms that no measurable reaction occurred between the BST and BZN phases during the annealing process. The surface of sandwich thin films is compact and crack-free. The BST/BZN/BST sandwich thin films annealed at 750 degrees C exhibit a moderate dielectric constant around 91, a low loss tangent of 0.011, and a relative tunability of 27% at a bias field of 600 kV/cm at 10kHz. Meanwhile, the FOM (defined as the ratio of tunability and loss tangent at room temperature) of BST/BZN/BST sandwich thin films is 24.5. The relative large dielectric constant, low loss tangent, and high FOM suggest that BST/BZN/BST sandwich thin films have potential application for tunable microwave device applications.
引用
收藏
页码:3 / 9
页数:7
相关论文
共 50 条
[21]   Preparation and characterization of composites from Ba0.5Sr0.5TiO3 and polystyrene [J].
Chen, Q. ;
Hong, R. Y. ;
Feng, W. G. .
JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 609 :274-283
[22]   Phase, microstructure and dielectric properties of BaSrZnSi2O7 - Ba0.5Sr0.5TiO3 microwave tunable composite ceramics [J].
Zhang, Mingwei ;
Xin, Le .
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2015, 9 (5-6) :673-677
[23]   Structural and multiferroic properties of Fe-doped Ba0.5Sr0.5TiO3 solids [J].
Guo, Zhengang ;
Pan, Liqing ;
Bi, Chong ;
Qiu, Hongmei ;
Zhao, Xuedan ;
Yang, Lihong ;
Rafique, M. Yasir .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2013, 325 :24-28
[24]   Thin films of CCVD Ba0.5Sr0.5TiO3 and SrTiO3 for electrically tunable coupled microstripline phase shifters [J].
Lin, WY ;
Huang, H ;
Yang, F ;
Schmitt, JJ ;
Hunt, AT ;
Romanofsky, RR ;
Van Keuls, FW ;
Miranda, FA ;
Mueller, CH .
INTEGRATED FERROELECTRICS, 2000, 29 (1-2) :A1-A12
[25]   Preparation of (100)-oriented LaNiO3 on Si for the textured Ba0.5Sr0.5TiO3 thin films [J].
Zhang, C. C. ;
Shi, J. C. ;
Yang, C. S. ;
Ding, G. F. .
APPLIED SURFACE SCIENCE, 2008, 255 (05) :2773-2776
[26]   Effect of MgWO4 content on properties of Ba0.5Sr0.5TiO3 composite ceramics for tunable microwave applications [J].
Zhang, Mingwei ;
Zhai, Jiwei ;
Zhang, Jingji ;
Jiang, Haitao ;
Yao, Xi .
MATERIALS RESEARCH BULLETIN, 2011, 46 (07) :1102-1106
[27]   Multifunctional characterization of multiferroic 0.5(NdFeO3)-0.5 (Ba0.5Sr0.5TiO3) for storage and photovoltaics applications [J].
Mohanty, Bhagyashree ;
Nayak, Nimai C. ;
Parida, B. N. ;
Parida, R. K. .
INORGANIC CHEMISTRY COMMUNICATIONS, 2023, 151
[28]   Dielectric properties of Ba0.5Sr0.5TiO3 ceramics sintered by pulse electric current sintering [J].
Shen, C ;
Liu, QF ;
Liu, Q .
JOURNAL OF INORGANIC MATERIALS, 2004, 19 (06) :1339-1344
[29]   Combined effects of thickness, grain size and residual stress on the dielectric properties of Ba0.5Sr0.5TiO3 thin films [J].
Pecnik, Tanja ;
Glinsek, Sebastjan ;
Kmet, Brigita ;
Malic, Barbara .
JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 646 :766-772
[30]   Structural and dielectric properties of Ba0.5Sr0.5TiO3 thin films grown on LAO with homo-epitaxial layer for tunable applications [J].
Sekhar, MC .
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2004, 18 (15) :2153-2168