Back gate effects on threshold voltage sensitivity to SOI thickness in fully-depleted SOI MOSFETs

被引：11
|
作者：
Noguchi, M [1 ]
Numata, T
Mitani, Y
Shino, T
Kawanaka, S
Oowaki, Y
Toriumi, A
机构：
[1] Toshiba Corp, Adv LSI Technol Lab, Yokohama, Kanagawa 235, Japan
[2] Toshiba Corp Semicond Co, Yokohama, Kanagawa 2358522, Japan
来源：
IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 01期
关键词：
MOSFETs; sensitivity; SOI technology; thickness control;
D O I：
10.1109/55.892435
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The dependence of threshold voltage on silicon-on-insulator (SOI) thickness is studied on fully-depleted SOI MOSFETs, and, for this purpose, back-gate oxide thickness and back gate voltage are varied. When the back gate oxide is thinner than the critical thickness dependent on the back gate voltage, the threshold voltage has a minimum in cases where the SOI film thickness is decreased, because of capacitive coupling between the SOI layer and the back gate. This fact suggests that threshold voltage fluctuations due to SOI thickness variations are reduced by controlling the back gate voltage and thinning the back gate oxide.
引用
收藏
页码：32 / 34
页数：3
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