High-volume production of 650nm GaInP/AlGaInP laser diodes

被引:0
|
作者
Xia, W [1 ]
Wang, L [1 ]
Li, SQ [1 ]
Ren, ZX [1 ]
Xu, XG [1 ]
机构
[1] Shandong Univ, Shandong, Peoples R China
关键词
650nm laser diodes; low threshold current; high-volume production; high power output;
D O I
10.1117/12.573862
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Red laser diodes based on the semiconductor material GaInP/AlGaInP have been extensively studied over the last ten years. It brings great commercial opportunity for its super advantages, such as low power consumption, direct modulation, small size, reduced weight, high efficient and high reliability etc. It is widely applied in laser pointer, DVD system, bar code scanner, industry measurement and medical treatment [1-3]. In addition, an emerging application for red laser diodes is in plastic optical fiber communication. It is very competitive when used in short range fiber networks for its low cost and long lifespan. Red laser diodes that used in hand pointer and industry measurement, which are powered by batteries, especially require low operating current. With the support of Chinese state key project, we realize the mass production of 650nm semiconductor laser chips. Low threshold and high slope efficiency is the most advantage of our laser chips. It can reach high power output at very low current. At present, six million 650nm LD chips can be produced per month. It partly replaces the imported merchandize, which are made in Taiwan and America. We have become the biggest 650nm LD chips supplier and occupy more than 30% market distribution in China. In the past one year, the mass production of 650nm GaInP/AlGaInP laser diodes shows good quality with the threshold current of 8 to 12mA, output power of 23 similar to 34mW at 40mA CW, and the slope efficiency of 0.80 to 1.1 0mW/mA.
引用
收藏
页码:213 / 216
页数:4
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