Investigation of a new In2O3-based selective H2 gas sensor with low power consumption

被引:63
作者
Zhan, ZL [1 ]
Jiang, DG
Xu, JQ
机构
[1] Zhengzhou Univ, Sch Chem Engn, Zhengzhou 450002, Peoples R China
[2] Zhengzhou Inst Light Ind, Dept Chem Engn, Zhengzhou 450002, Peoples R China
关键词
oxides; chemical vapour deposition; semiconductors; diffusion;
D O I
10.1016/j.matchemphys.2004.01.043
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The nanometer-size In2O3 was synthesized via a reverse microemulsion. A new catalytic combustion-type In2O3-based H-2 gas sensor was developed based on the technology for fabricating the direct-heating-type sensor and a surface-modifying process. A dense SiO2 layer near the surface of the sensor was formed by chemical vapor deposition (CVD) of hexamethyldisiloxane (HMDS). The SiO2 layer, which acted as a molecular sieve, reduced the penetration of large molecular, such as C2H5OH, CH4, i-C4H10, into the sensing layer, resulting in the improvement of selectivity to H-2. The sensitive properties and the working mechanism of the sensor were presented. The In2O3 nanoparticles prepared by microemulsion were characterized by transmission electron microscopy and X-ray diffraction. (C) 2004 Published by Elsevier B.V.
引用
收藏
页码:250 / 254
页数:5
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