Grain Size Engineering of Ferroelectric Zr-doped HfO2 for the Highly Scaled Devices Applications

被引：65

作者：

Liao, Jiajia ^{[1
,2
]}

Zeng, Binjian ^{[1
,2
]}

Sun, Qi ^{[1
,2
]}

Chen, Qiang ^{[1
,2
]}

Liao, Min ^{[1
,2
]}

Qiu, Chenguang ^{[3
]}

Zhang, Zhiyong ^{[3
]}

Zhou, Yichun ^{[1
,2
]}

机构：

[1] Xiangtan Univ, Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Peoples R China

[2] Xiangtan Univ, Sch Mat Sci & Engn, Minist Educ, Xiangtan 411105, Peoples R China

[3] Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 11期

基金：

中国国家自然科学基金;

关键词：

Ferroelectric transistors; scaling; Zr-doped HfO2; atomic layer deposition; grain size engineering; THIN-FILMS; DEPOSITION;

D O I：

10.1109/LED.2019.2944491

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ferroelectric Zr-doped HfO2 (HZO) is a promising candidate component for the future transistors and memory devices applications. To address the device-to-device variation in those highly scaled devices, the grain properties of 12-nm-thick HZO films are investigated and optimized by altering the atomic layer deposition (ALD) cycle ratio of HfO2 and ZrO2 at a constant Zr concentration. The largest remanent polarization $2{P}_{r}$ of $41\mu \text{C}$ /cm(2), refined average grain radius from 16.6 nm to 13 nm, and improved grain size distribution with the standard deviation reduced from 5 to 3.3 are realized by adjusting the ALD cycle ratio to 5/5. Furthermore, the possible underlying mechanisms for the ferroelectric behaviors and the growth modes of the HZO films deposited with various cycle ratios are demonstrated.

引用

页码：1868 / 1871

页数：4

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