Introduction of fine engineered domain configuration into potassium niobate single crystals

被引：0

作者：

Yokoh, Keisuke ^{[1
]}

Muraishi, Tomomitsu ^{[1
]}

Nam, Song-Min ^{[1
]}

Kakemoto, Hirofumi ^{[1
]}

Tsurumi, Takaaki ^{[1
]}

Kumagai, Hirohiko ^{[2
]}

Wada, Satoshi ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Met & Ceram Sci, Meguro Ku, 2-12-1 Ookayama, Tokyo 1528552, Japan

[2] Asahi Techno Glass Co, Elect Mat Grp, Funabashi, Chiba 2730044, Japan

来源：

ELECTROCERAMICS IN JAPAN X | 2007年 / 350卷

关键词：

potassium niobate; single crystal; engineered domain configuration; piezoelectric constant; domain wall;

D O I：

10.4028/www.scientific.net/KEM.350.89

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

To induce fine engineered domain configurations into potassium niobate (KNbO3) single crystals, two kinds of methods were performed, i.e., (1) high DC electric field exposure along the opposite direction of polarization of KNbO3 single-domain crystals at room temperature, and (2) introduction of randomly oriented fine domain configuration by heat treatment at 700 degrees C and then high DC electric field exposure along [001](c) direction of KNbO3 multidomain crystals at room temperature. When the method (1) was performed, finally, the poled KNbO3 crystals became to single-domain state again through the formation of multidomain state. On the other hand, the KNbO3 multidomain crystals were obtained by using the method (2), and an enhancement of piezoelectric-related properties was observed.

引用

页码：89 / +

页数：2

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