Interaction-induced crossover between weak antilocalization and weak localization in a disordered InAs/GaSb double quantum well

被引：5

作者：

Sazgari, Vahid ^{[1
,2
]}

Sullivan, Gerard ^{[3
]}

Kaya, Ismet I. ^{[1
,2
]}

机构：

[1] Sabanci Univ, Fac Engn & Nat Sci, TR-34956 Istanbul, Turkey

[2] Sabanci Univ, Nanotechnol Res & Applicat Ctr, TR-34956 Istanbul, Turkey

[3] Teledyne Sci & Imaging, Thousand Oaks, CA 91630 USA

来源：

PHYSICAL REVIEW B | 2020年 / 101卷 / 15期

关键词：

SPIN-ORBIT INTERACTION; 2-DIMENSIONAL ELECTRON; BEHAVIOR;

D O I：

10.1103/PhysRevB.101.155302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a magnetotransport study in an InAs/GaSb double quantum well structure in the weak localization regime. As the charge carriers are depleted using a top-gate electrode, we observe a crossover from weak antilocalization (WAL) to weak localization (WL), when the inelastic phase-breaking time decreases below spin-orbit characteristic time as a result of enhanced electron-electron interactions at lower carrier concentrations. The same crossover is observed with increasing temperature. The linear temperature behavior of inelastic scattering rate indicates that the dominant phase-breaking mechanism in our 2D system is due to electron-electron interaction.

引用

页数：6

共 24 条

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[22] Effects of weak localization and interaction of charge carriers in 2D hole gas in Ge quantum well in SiGe/Ge/SiGe heterostructure
Department of Physics, University of Warwick, Coventry, CV4 7AL, United Kingdom
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Fiz Nizk Temp, 2006, 7 (896-904):
[23] Low magnetic field anomaly of the Hall effect in disordered two-dimensional systems: Interplay between weak localization and electron-electron interaction
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[24] Weak localization and charge-carrier interaction effects in a two-dimensional hole gas in a germanium quantum well in a SiGe/Ge/SiGe heterostructure
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