Numerical simulation of flared planar semiconductor optical amplifier taking into account thermal effects

被引：0
|
作者：
Logginov, AS [1 ]
Marjin, NN [1 ]
Rzhanov, AG [1 ]
机构：
[1] Moscow MV Lomonosov State Univ, Fac Phys, Div Oscillat Phys, Moscow 117234, Russia
来源：
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VI, PTS 1 AND 2 | 1998年 / 3283卷
关键词：
semiconductor laser; optical amplifier; computer simulation; heat diffusion; nonlinear refraction;
D O I：
10.1117/12.316663
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Physical and numerical self-consistent models of the semiconductor optical amplifier (SOA) accounting for effects of the carriers diffusion and the heat emission are developed. Transient characteristics of SOA are obtained for short (below 50 ns) and for long (up to 20 mks) periods in quasi-stationary nan-coherent approximation with regard to processes of the heat diffusion. Frequency dependent nonlinear optical reply to the bias current modulation is observed. The physical interpretation of the observable in the SOA phenomena is given, and the main parameters, which determine the regime of the device operation, are exposed. Obtained results are in qualitative agreement with the experimental data observed.
引用
收藏
页码：997 / 1005
页数：3
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