Flexible germanium nanomembrane metal-semiconductor-metal photodiodes

被引：31

作者：

Kim, Munho ^{[1
,3
]}

Seo, Jung-Hun ^{[1
]}

Yu, Zongfu ^{[1
]}

Zhou, Weidong ^{[2
]}

Ma, Zhenqiang ^{[1
]}

机构：

[1] Univ Wisconsin, Dept Elect & Comp Engn, 1415 Johnson Dr, Madison, WI 53706 USA

[2] Univ Texas Arlington, Dept Elect Engn, Arlington, TX 76019 USA

[3] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 05期

关键词：

GE-ON-SI; TENSILE STRAIN; DARK-CURRENT; PHOTODETECTORS; ENHANCEMENT; SUPPRESSION; GE/SI;

D O I：

10.1063/1.4960460

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate flexible Ge nanomembrane (Ge NM) based metal-semiconductor-metal photodiodes. The effect of uniaxial tensile strain on Ge NM based photodiodes was investigated using bending fixtures. Dark current density is decreased from 21.5 to 4.8mA/cm(2) at 3V by a tensile strain of 0.42% while photon responsivity is increased from 0.2 to 0.45A/W at the wavelength of 1.5 mu m. Enhanced responsivity is also observed at longer wavelengths up to 1.64 mu m. The uniaxial tensile strain effectively reduces the direct bandgap energy of the Ge NM, leading to a shift of the absorption edge toward a longer wavelength. Published by AIP Publishing.

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