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Anderson Localization in the Fractional Quantum Hall Effect
被引:10
作者:
Pu, Songyang
[1
,2
]
Sreejith, G. J.
[3
]
Jain, J. K.
[1
]
机构:
[1] Penn State Univ, Dept Phys, 104 Davey Lab, University Pk, PA 16802 USA
[2] Univ Leeds, Sch Phys & Astron, Leeds LS2 9JT, W Yorkshire, England
[3] Indian Inst Sci Educ & Res, Pune 411008, Maharashtra, India
关键词:
DENSITY-OF-STATES;
SCALING THEORY;
COMPOSITE FERMIONS;
TRANSITION;
PERCOLATION;
FLUX;
D O I:
10.1103/PhysRevLett.128.116801
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
The interplay between interaction and disorder-induced localization is of fundamental interest. This article addresses localization physics in the fractional quantum Hall state, where both interaction and disorder have nonperturbative consequences. We provide compelling theoretical evidence that the localization of a single quasiparticle of the fractional quantum Hall state at filling factor v = n/(2n + 1) has a striking quantitative correspondence to the localization of a single electron in the (n + 1)th Landau level. By analogy to the dramatic experimental manifestations of Anderson localization in integer quantum Hall effect, this leads to predictions in the fractional quantum Hall regime regarding the existence of extended states at a critical energy, and the nature of the divergence of the localization length as this energy is approached. Within a mean field approximation, these results can be extended to situations where a finite density of quasiparticles is present.
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页数:6
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